Power Transistors
1
2SA2004
Silicon PNP epitaxial planer type
For power amplification
I Features
High forward current transfer ratio h
FE
Satisfactory linearity of forward current transfer ratio h
FE
Dielectric breakdown voltage of the package: > 5 kV
High-speed switching
I Absolute Maximum Ratings T
C
= 25C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
-60
V
Collector to emitter voltage
V
CEO
-60
V
Emitter to base voltage
V
EBO
-5
V
Peak collector current
I
CP
-16
A
Collector current
I
C
-8
A
Collector power
T
C
= 25C
P
C
20
W
dissipation
T
a
= 25C
2.0
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
I Electrical Characteristics T
C
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= -60 V, I
E
= 0
-100
A
I
CEO
V
CE
= -60 V, I
E
= 0
-100
A
Collector to emitter voltage
V
CEO
I
C
= -10 mA, I
B
= 0
-60
V
Forward current transfer ratio
h
FE1
V
CE
= -2 V, I
C
= - 0.1 A
100
230
h
FE2
V
CE
= -2 V, I
C
= -5 A
30
Collector to emitter saturation voltage
V
CE(sat)
I
C
= -5 A, I
B
= - 0.25 A
-1.2
V
Base to emitter saturation voltage
V
BE(sat)
I
C
= -5 A, I
C
= - 0.25 A
-1.7
V
Turn-on time
t
on
I
C
= -4 A, I
B1
= -400 mA
0.2
0.5
s
Storage time
t
stg
I
B2
= 400 mA, V
CC
= 50 V
0.1
0.15
s
Fall time
t
f
0.5
1.0
s
1.4
0.2
1.6
0.2
0.8
0.1
0.55
0.15
2.54
0.30
5.08
0.50
1
2
3
2.6
0.1
2.9
0.2
4.6
0.2
3.2
0.1
3.0
0.5
9.9
0.3
15.0
0.5
13.7
0.2
4.2
0.2
Solder Dip
1: Base
2: Collector
3: Emitter
TO-220D Package
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