Transistors
1
2SA2009
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
I Features
High collector to emitter voltage V
CEO
Low noise voltage NV
I Absolute Maximum Ratings T
a
= 25C
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S Mini Type Package (3-pin)
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
-120
V
Collector to emitter voltage
V
CEO
-120
V
Emitter to base voltage
V
EBO
-5
V
Peak collector current
I
CP
-50
mA
Collector current
I
C
-20
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= -50 V, I
E
= 0
-100
nA
I
CEO
V
CE
= -50 V, I
B
= 0
-1
A
Collector to base voltage
V
CBO
I
C
= -10 A, I
E
= 0
-120
V
Collector to emitter voltage
V
CEO
I
C
= -1 mA, I
B
= 0
-120
V
Emitter to base voltage
V
EBO
I
E
= -10 A, I
C
= 0
-5
V
Forward current transfer ratio
*
h
FE
V
CE
= -5 V, I
C
= -2 mA
180
700
Collector to emitter saturation voltage
V
CE(sat)
I
C
= -20 mA, I
B
= -2 mA
- 0.6
V
Noise voltage
NV
V
CE
= -40 V, I
C
= -1 mA, G
V
= 80 dB
130
mV
R
g
= 100 kW, Function = FLAT
Transition frequency
f
T
V
CB
= -5 V, I
E
= 2 mA, f = 200 MHz
120
MHz
I Electrical Characteristics T
a
= 25C 3C
2.1
0.1
1.3
0.1
0.3
+0.1
0.0
2.0
0.2
1.25
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
0.1
0.9
0.1
0 to 0.1
0.9
+0.2 0.1
0.15
+0.10
0.05
5
10
Marking Symbol: AR
Note) *: Rank classification
Rank
R
S
T
h
FE
180 to 360
260 to 520
360 to 700
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