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Электронный компонент: 2SB0745A2SB745A

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Transistors
1
Publication date: January 2003
SJC00050BED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SB0745
V
CBO
I
C
= -10 A, I
E
= 0
-35
V
(Emitter open)
2SB0745A
-55
Collector-emitter voltage
2SB0745
V
CEO
I
C
= -2 mA, I
B
= 0
-35
V
(Base open)
2SB0745A
-55
Emitter-base voltage (Collector open)
V
EBO
I
E
= -10 A, I
C
= 0
-5
V
Base-emitter voltage
V
BE
V
CE
= -1 V, I
C
= -100 mA
- 0.7
-1.0
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -10 V, I
E
= 0
- 0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -10 V, I
B
= 0
-1
A
Forward current transfer ratio
*
h
FE
V
CE
= -5 V, I
C
= -2 mA
180
700
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA
- 0.6
V
Transition frequency
f
T
V
CB
= -5 V, I
E
= 2 mA, f = 200 MHz
150
MHz
Noise voltage
NV
V
CE
= -10 V, I
C
= -1 mA, G
V
= 80 dB
150
mV
R
g
= 100 k, Function = FLAT
2SB0745, 2SB0745A
(2SB745, 2SB745A)
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
Features
Low noise voltage NV
High forward current transfer ratio h
FE
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
6.9
0.1
2.5
0.1
(1.0)
(1.0)
(1.5)
(0.85)
0.45
0.05
0.55
0.1
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(0.4)
3.5
0.1
4.5
0.1
4.1
0.2
2.4
0.2
1.25
0.05
2.0
0.2
1.0
0.1
(1.5)
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0745
V
CBO
-35
V
(Emitter open)
2SB0745A
-55
Collector-emitter voltage 2SB0745
V
CEO
-35
V
(Base open)
2SB0745A
-55
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-50
mA
Peak collector current
I
CP
-200
mA
Collector power dissipation
P
C
400
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
h
FE
180 to 360
260 to 520
360 to 700
Note) The part numbers in the parenthesis show conventional part number.
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
2SB0745, 2SB0745A
2
SJC00050BED
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
P
C
T
a
I
C
V
CE
I
C
I
B
h
FE
I
C
f
T
I
E
C
ob
V
CB
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
-12
-10
-8
-2
-6
-4
0
-160
-120
-40
-100
-140
-80
-20
-60
T
a
= 25C
I
B
= -350 A
-300 A
-250 A
-200 A
-150 A
-100 A
-50 A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0
- 0.5
- 0.4
- 0.1
- 0.3
- 0.2
0
-160
-120
-40
-80
V
CE
= -5 V
T
a
= 25C
Base current I
B
(mA)
Collector current I
C
(mA
)
0
-1.0
- 0.8
- 0.2
- 0.6
- 0.4
0
-800
-600
-200
-400
V
CE
= -5 V
T
a
= 25C
Base-emitter voltage V
BE
(V)
Base current I
B
(
A
)
0
-2.0
-1.6
- 0.4
-1.2
- 0.8
0
-120
-100
-80
-60
-40
-20
V
CE
= -5 V
T
a
= 75C
-25C
25
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
- 0.1
-1
-10
-100
- 0.01
- 0.1
-1
-10
-100
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
- 0.1
-1
-10
-100
0
600
500
400
300
200
100
V
CE
= -5 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0.1
1
10
100
0
500
400
300
200
100
V
CB
= -5 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
- 0.1
-1
-10
-100
0
20
16
12
8
4
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
2SB0745, 2SB0745A
3
SJC00050BED
NV
V
CE
NV
V
CE
NV
I
C
NV
I
C
NV
R
g
NV
R
g
-1
-10
-100
0
160
120
40
80
I
C
= -1 mA
G
V
= 80 dB
Function
= FLAT
4.7 k
R
g
= 100 k
22 k
Noise voltage NV
(mV
)
Collector-emitter voltage V
CE
(V)
-1
-10
-100
0
240
120
40
280
160
80
200
I
C
= -1 mA
G
V
= 80 dB
Function
= RIAA
4.7 k
R
g
= 100 k
22 k
Noise voltage NV
(mV
)
Collector-emitter voltage V
CE
(V)
- 0.01
- 0.1
-1
0
160
120
40
80
V
CE
= -10 V
G
V
= 80 dB
Function
= FLAT
4.7 k
R
g
= 100 k
22 k
Noise voltage NV
(mV
)
Collector current I
C
(mA)
- 0.01
- 0.1
-1
0
240
120
280
160
40
200
80
V
CE
= -10 V
G
V
= 80 dB
Function
= RIAA
4.7 k
R
g
= 100 k
22 k
Noise voltage NV
(mV
)
Collector current I
C
(mA)
1
10
100
0
160
120
40
80
V
CE
= -10 V
G
V
= 80 dB
Function
= FLAT
- 0.1 mA
I
C
= -1 mA
- 0.5 mA
Noise voltage NV
(mV
)
Signal source resistance R
g
(k
)
1
10
100
0
240
120
280
160
40
200
80
- 0.1 mA
I
C
= -2 mA
- 0.5 mA
V
CE
= -10 V
G
V
= 80 dB
Function
= RIAA
Noise voltage NV
(mV
)
Signal source resistance R
g
(k
)
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2002 JUL