1
Power Transistors
2SB0933
(2SB933)
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1256
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
q
Satisfactory linearity of foward current transfer ratio h
FE
q
Large collector current I
C
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
130
80
7
10
5
40
1.3
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 2A
I
C
= 4A, I
B
= 0.2A
I
C
= 4A, I
B
= 0.2A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 2A, I
B1
= 0.2A, I
B2
= 0.2A
min
80
45
90
typ
30
0.13
1.5
0.13
max
10
50
260
0.5
1.5
Unit
A
A
V
V
V
MHz
s
s
s
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
0.2
6.0
0.5
10.0
0.3
10.5min.
2.0
1.5
0.1
1.5max.
0.8
0.1
5.08
0.5
2.54
0.3
1.1max.
0.5max.
1.0
0.1
3.4
0.3
2
1
3
Unit: mm
8.5
0.2
4.4
0.5
2.0
10.0
0.3
14.7
0.5
4.4
0.5
6.0
0.3
3.4
0.3
2.54
0.3
5.08
0.5
1.0
0.1
0.8
0.1
1.5
+0
0.4
3.0
+0.4
0.2
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Note)The part number in the parenthesis shows conventional part number.
2
Power Transistor 2SB0933
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 50
50
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(3)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
8
6
2
5
7
4
1
3
I
B
=120mA
100mA
80mA
60mA
40mA
30mA
20mA
10mA
3mA
T
C
=25C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=20
25C
T
C
=100C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=20
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=2V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=10V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
3.2
0.8
2.4
1.6
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
10ms
t=0.5ms
1ms
I
CP
I
C
300ms
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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2001 MAR
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