Power Transistors
1
Publication date: April 2003
SJD00026BED
2SB0947
(2SB947)
, 2SB0947A
(2SB947A)
Silicon PNP epitaxial planar type
For low-voltage switcing
Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0947
V
CBO
-40
V
(Emitter open)
2SB0947A
-50
Collector-emitter voltage 2SB0947
V
CEO
-20
V
(Base open)
2SB0947A
-40
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-10
A
Peak collector current
I
CP
-15
A
Collector power
P
C
35
W
dissipation
T
a
= 25C
2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0947
V
CEO
I
C
= -10 mA, I
B
= 0
-20
V
(Base open)
2SB0947A
-40
Collector-base cutoff
2SB0947
I
CBO
V
CB
= -40 V, I
E
= 0
-50
A
current (Emitter open)
2SB0947A
V
CB
= -50 V, I
E
= 0
-50
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -5 V, I
C
= 0
-50
A
Forward current transfer ratio
h
FE1
V
CE
= -2 V, I
C
= - 0.1 A
45
h
FE2
*
V
CE
= -2 V, I
C
= -2 A
60
260
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -7 A, I
B
= - 0.23 A
- 0.6
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= -7 A, I
B
= - 0.23 A
-1.5
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= - 0.5 A, f = 10 MHz
150
MHz
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
200
pF
(Common base, input open circuited)
Turn-on time
t
on
I
C
= -2 A, I
B1
= -66 mA, I
B2
= 66 mA
0.1
s
Storage time
t
stg
V
CC
= -20 V
0.5
s
Fall time
t
f
0.1
s
Note) The part numbers in the parenthesis show conventional part number.
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
(4.0)
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.3
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
h
FE2
60 to 120
90 to 180
130 to 260
2SB0947, 2SB0947A
2
SJD00026BED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
0
160
40
120
80
0
10
20
30
40
50
Collector power dissipation P
C
(W)
Ambient temperature T
a
(
C)
(1)T
C
=Ta
(2)With a 100
1002mm
Al heat sink
(3)With a 50
502mm
Al heat sink
(4)Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
0
0
-12
-2
-10
-4
-8
-6
-12
-10
-8
-6
-4
-2
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
T
C
=25C
100mA
80mA
60mA
40mA
20mA
30mA
10mA
I
B
=160mA
- 0.01
- 0.1
-1
-10
- 0.1
-1
-10
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
I
C
/I
B
=30
T
C
=100C
25C
25C
- 0.01
- 0.1
-1
-10
-1
- 0.1
-10
I
C
/I
B
=30
T
C
=25C
25C
100C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
- 0.1
-1
-10
-100
1
10
10
2
10
4
10
3
V
CE
=2V
T
C
=100C
25C
25C
Forward current transfer ratio h
FE
Collector current I
C
(A)
- 0.01
- 0.1
-1
-10
1
10
10
2
10
4
10
3
V
CE
=10V
f=10MHz
T
C
=25C
Transition frequency f
T
(MHz)
Collector current I
C
(A)
- 0.1
-1
-10
-100
f=1MHz
T
C
=25C
1
10
10
2
10
3
10
4
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
C
ob
V
CB
t
on
, t
stg
, t
f
I
C
Safe operation area
0.01
10
1
0.1
0
-8
-2
-6
-4
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30
(I
B1
=I
B2
)
V
CC
=20V
T
C
=25C
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
s)
Collector current I
C
(A)
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
t=1ms
t=10ms
I
CP
I
C
2SB0947A
2SB0947
Non repetitive pulse
T
C
=25C
DC
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and semiconductors described in this material
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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2002 JUL
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