1
Power Transistors
2SB0947, 2SB0947A
(2SB947, 2SB947A)
Silicon PNP epitaxial planar type
For low-voltage switching
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
High-speed switching
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
40
50
20
40
5
15
10
35
2
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SB0947
2SB0947A
2SB0947
2SB0947A
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.10.1
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 40V, I
E
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 2A
I
C
= 7A, I
B
= 0.23A
I
C
= 7A, I
B
= 0.23A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 2A, I
B1
= 66mA, I
B2
= 66mA
min
20
40
45
90
typ
150
200
0.1
0.5
0.1
max
50
50
50
260
0.6
1.5
Unit
A
A
V
V
V
MHz
pF
s
s
s
2SB0947
2SB0947A
2SB0947
2SB0947A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
Note.) The Part numbers in the Parenthesis show conventional part number.
2
Power Transistors
2SB0947, 2SB0947A
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100
100 2mm
Al heat sink
(3) With a 50
50 2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
12
10
8
6
4
2
T
C
=25C
100mA
80mA
60mA
40mA
20mA
30mA
10mA
I
B
=160mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
1
10
0.3
3
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=30
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
0.3
3
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=30
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
V
CE
=2V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=10V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
8
2
6
4
7
1
5
3
0.01
10
1
0.1
0.03
0.3
3
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30
(I
B1
=I
B2
)
V
CC
=20V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
t=1ms
10ms
I
CP
I
C
2SB0947A
2SB0947
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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2001 MAR
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