Power Transistors
1
Publication date: April 2003
SJD00028BED
2SB0949
(2SB949)
, 2SB0949A
(2SB949A)
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1275 and 2SD1275A
Features
High forward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0949
V
CBO
-60
V
(Emitter open)
2SB0949A
-80
Collector-emitter voltage 2SB0949
V
CEO
-60
V
(Base open)
2SB0949A
-80
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-2
A
Peak collector current
I
CP
-4
A
Collector power
T
C
= 25C
P
C
35
W
dissipation
2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0949
V
CEO
I
C
= -30 mA, I
B
= 0
-60
V
(Base open)
2SB0949A
-80
Base-emitter voltage
V
BE
V
CE
= -4 V, I
C
= -2 A
-2.8
V
Collector-base cutoff
2SB0949
I
CBO
V
CB
= -60 V, I
E
= 0
-1
mA
current (Emitter open)
2SB0949A
V
CB
= -80 V, I
E
= 0
-1
Collector-emitter cutoff
2SB0949
I
CEO
V
CE
= -30 V, I
B
= 0
-2
mA
current (Base open)
2SB0949A
V
CE
= -40 V, I
B
= 0
-2
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -5 V, I
C
= 0
-2
mA
Forward current transfer ratio
h
FE1
V
CE
= -4 V, I
C
= -1 A
1 000
h
FE2
*
V
CE
= -4 V, I
C
= -2 A
1 000
10 000
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -2 A, I
B
= -8 mA
-2.5
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= - 0.5 A, f = 1 MHz
20
MHz
Turn-on time
t
on
I
C
= -2 A, I
B1
= -8 mA, I
B2
= 8 mA
0.4
s
Storage time
t
stg
V
CC
= -50 V
1.5
s
Fall time
t
f
0.5
s
Note) The part numbers in the parenthesis show conventional part number.
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
(4.0)
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.3
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
h
FE2
1 000 to 2 500
2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E
2SB0949, 2SB0949A
2
SJD00028BED
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
P
C
T
a
I
C
V
CE
I
C
V
BE
Safe operation area
R
th
t
0
160
40
120
80
0
10
20
30
40
50
Collector power dissipation P
C
(W)
Ambient temperature T
a
(
C)
(1)T
C
=Ta
(2)With a 100
1002mm
Al heat sink
(3)With a 50
502mm
Al heat sink
(4)Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
0
-1
-2
-3
-5
-4
0
-5
-1
-2
-4
-3
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
T
C
=25C
I
B
=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.2mA
0.1mA
4.0mA
0
-3.2
- 0.8
-2.4
-1.6
0
-2
-4
-6
-8
-10
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
V
CE
=4V
25C
T
C
=100C
25C
- 0.01
- 0.01
- 0.1
-1
-10
-100
- 0.1
-1
-10
I
C
/I
B
=250
25C
T
C
=100C
25C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
- 0.01
- 0.1
-1
-10
10
10
2
10
3
10
4
10
5
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
=4V
T
C
=100C
25C
25C
- 0.1
-1
-10
-100
I
E
=0
f=1MHz
T
C
=25C
1
10
10
2
10
3
10
4
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
- 0.01
-1
- 0.1
-1
-10
-100
-10
-100
-1 000
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
t=1ms
t=10ms
I
CP
I
C
2SB0949A
2SB0949
Non repetitive pulse
T
C
=25C
DC
1
10
-2
10
-1
1
10
10
3
10
2
10
-4
10
4
10
3
10
2
10
1
10
-1
10
-2
10
-3
Time t (s)
Thermal resistance R
th
(
C/W)
(1)
(2)
(1)Without heat sink
(2)With a 100
1002mm Al heat sink
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2002 JUL
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