Schottky Barrier Diodes (SBD)
1
Publication date:January 2004
SKH00134BED
MA27D30
Silicon epitaxial planar type
For super high speed switching
Features
Small reverse current: I
R
< 2
A (at V
R
= 30 V)
Optimum for high frequency rectification because of its short
reverse recovery time t
rr
.
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Repetitive peak reverse voltage
V
RRM
30
V
Forward current (Average)
I
F(AV)
100
mA
Peak forward current
I
FM
200
mA
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
= 10 mA
0.38
0.44
V
V
F2
I
F
= 100 mA
0.51
0.58
V
Reverse current
I
R1
V
R
= 10 V
0.3
A
I
R2
V
R
= 30 V
2
A
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
9
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
1
ns
I
rr
= 10 mA, R
L
= 100
Electrical Characteristics T
a
=
25
C
3
C
Marking Symbol: 8N
Unit: mm
5
5
0.27
1
2
1.40
0.05
0.52
0.03
1.00
0.05
0.60
0.05
0.20
0.05
0 to 0.01
0.20
0.05
0.15 max.
+0.05
0.02
0.12
+0.05
0.02
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. *: t
rr
measurement circuit
1: Anode
2: Cathode
SSSMini2-F2 Package
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
90%
t
p
= 2 s
t
r
= 0.35 ns
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
10%
Input Pulse
Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
I
F
t
t
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form
Analyzer
(SAS-8130)
R
i
= 50
V
R
A
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
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permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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