1
Transistor
2SB1297
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1937
s
Features
q
Extremely satisfactory linearity of the forward current transfer
ratio h
FE
.
q
High transition frequency f
T
.
q
Makes up a complementary pair with 2SD1937, which is opti-
mum for the pre-driver stage of a 40 to 60W output amplifier.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO92NL Package
5.0
0.2
13.5
0.5
0.7
0.2
8.0
0.2
1.27
1 2 3
1.27
4.0
0.2
0.45
+0.15
0.1
0.45
+0.15
0.1
2.3
0.2
0.7
0.1
2.54
0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
120
120
5
1
0.5
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 0.1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
120
5
90
50
typ
250
max
220
1.0
1.2
30
Unit
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
90 ~ 155
130 ~ 220
*2
Pulse measurement
2
Transistor
2SB1297
0
160
40
120
80
140
20
100
60
0
1.6
1.2
0.4
1.0
1.4
0.8
0.2
0.6
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25C
I
B
=10mA
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0
600
500
400
300
200
100
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
25C
Ta=75C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
3
10
30
100
0
320
240
80
200
280
160
40
120
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
40
30
10
25
35
20
5
15
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
10
30
10
Single pulse
Ta=25C
t=10ms
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
P
C
-- Ta
I
C
-- V
CE
h
FE
-- I
C
V
BE(sat)
-- I
C
V
CE(sat)
-- I
C
f
T
-- I
E
C
ob
-- V
CB
Area of safe operation (ASO)
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