Transistors
1
Publication date: December 2002
SJC00093CED
2SB1589
Silicon PNP epitaxial planar type
For low-frequency output amplification
Features
Low collector-emitter saturation voltage V
CE(sat)
Large collector power dissipation P
C
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-10
V
Collector-emitter voltage (Base open)
V
CEO
-10
V
Emitter-base voltage (Collector open)
V
EBO
-7
V
Collector current
I
C
-1.5
A
Peak collector current
I
CP
-2
A
Collector power dissipation
*
P
C
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Electrical Characteristics T
a
= 25C 3C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Applicable to the built-in diode
Note) *: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion
Marking Symbol: 1U
4.5
0.1
3.0
0.15
45
2.6
0.1
0.4 max.
1.6
0.2
1.5
0.1
4.0
2.5
0.1
3
+0.25 0.20
1.0
+0.1 0.2
0.5
0.08
0.4
0.04
0.4
0.08
1
2
3
1.5
0.1
3
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emiter open)
V
CBO
I
C
= -10 A, I
E
= 0
-10
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -1 mA, I
B
= 0
-10
V
Emiter-base voltage (Collector open)
V
EBO
I
E
= -10 A, I
C
= 0
-7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -7 V, I
E
= 0
-1
A
Forward current transfer ratio
*1
h
FE
V
CE
= -1 V, I
C
= -400 mA
200
700
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= -1 A, I
B
= -25 mA
- 0.24 - 0.35
V
Transition frequency
f
T
V
CB
= -6 V, I
E
= 50 mA, f = 200 MHz
190
MHz
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
65
pF
(Common base, input open circuited)
Forward voltage
*2
V
F
I
F
= - 500 mA
-1.3
V
2SB1589
2
SJC00093 CED
P
C
T
a
I
C
V
CE
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
Collector power dissipation P
C
(W
)
Ambient temperature T
a
(
C)
0
-12
-10
-8
-2
-6
-4
0
-3.0
-2.5
-2.0
-1.5
-1.0
- 0.5
T
a
= 25C
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
I
B
= 3.0 mA
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
0
-1.2
-1.0
- 0.8
- 0.2
- 0.6
- 0.4
0
-2.4
-2.0
-1.6
-1.2
- 0.8
- 0.4
V
CE
= -1 V
T
a
= 75C
-25C
25
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(A
)
- 0.01
- 0.1
-1
-10
- 0.001
- 0.01
- 0.1
-1
-10
I
C
/ I
B
= 40
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
- 0.01
- 0.1
-1
-10
0
600
500
400
300
200
100
V
CE
= -1 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(A)
1
10
100
0
600
500
400
300
200
100
V
CB
= -6 V
f
= 200 MHz
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
-1
-10
-100
0
120
100
80
60
40
20
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
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2002 JUL
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