1
Power Transistors
2SB1604, 2SB1604A
Silicon PNP epitaxial planar type
For low-voltage switching
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
q
High-speed switching
q
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
40
50
20
40
5
20
10
40
2
150
55 to +150
2SB1604
2SB1604A
2SB1604
2SB1604A
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO220E Full Pack Package
9.9
0.3
2
3
1
4.6
0.2
2.9
0.2
2.6
0.1
2.54
0.2
0.75
0.1
1.2
0.15
5.08
0.4
15.0
0.3
13.7
+0.5
0.2
3.2
0.1
3.0
0.2
8.0
0.2
4.1
0.2
Solder Dip
1.45
0.15
0.7
0.1
7
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 3A
I
C
= 10A, I
B
= 0.33A
I
C
= 10A, I
B
= 0.33A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 3A, I
B1
= 0.1A, I
B2
= 0.1A
min
20
40
45
90
typ
100
400
0.1
0.5
0.1
max
50
50
260
0.6
1.5
Unit
A
A
V
V
V
MHz
pF
s
s
s
2SB1604
2SB1604A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
2
Power Transistors
2SB1604, 2SB1604A
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) With a 50
50
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
12
10
8
6
4
2
T
C
=25C
80mA
60mA
50mA
40mA
35mA
20mA
15mA
30mA
25mA
10mA
5mA
I
B
=100mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
1
10
0.3
3
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=30
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
V
CE
=2V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
8
2
6
4
7
1
5
3
0.01
10
1
0.1
0.03
0.3
3
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30
(I
B1
=I
B2
)
V
CC
=20V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
0.1
1
10
0.3
3
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=30
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=10V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
CP
I
C
10ms
t=1ms
2SB1604A
2SB1604
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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