Power Transistors
1
Publication date: April 2003
SJD00017BED
2SB0936
(2SB936)
, 2SB0936A
(2SB936A)
Silicon PNP epitaxial planar type
For low-voltage switching
Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0936
V
CBO
-40
V
(Emitter open)
2SB0936A
-50
Collector-emitter voltage 2SB0936
V
CEO
-20
V
(Base open)
2SB0936A
-40
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-10
A
Peak collector current
I
CP
-20
A
Collector power dissipation
P
C
40
W
T
a
= 25C
1.3
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0936
V
CEO
I
C
= -10 mA, I
B
= 0
-20
V
(Base open)
2SB0936A
-40
Collector-base cutoff
2SB0936
I
CBO
V
CB
=
-40 V, I
E
= 0
-50
A
current (Emitter open)
2SB0936A
V
CB
=
-50 V, I
E
= 0
-50
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
-5 V, I
C
= 0
-50
A
Forward current transfer ratio
h
FE1
*
V
CE
= -2 V, I
C
= - 0.1 A
45
h
FE2
V
CE
= -2 V, I
C
= -3 A
90
260
Base-emitter voltage
V
BE(sat)
I
C
=
-10 A, I
B
=
- 0.33 A
-1.5
V
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -10 A, I
B
= - 0.33 A
- 0.6
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= - 0.5 A, f = 10 MHz
100
MHz
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
400
pF
(Common base, input open circuited)
Turn-on time
t
on
I
C
= -3 A,
0.1
s
Storage time
t
stg
I
B1
= - 0.1 A, I
B2
= 0.1 A
0.5
s
Fall time
t
f
V
CC
= -20 V
0.1
s
8.5
0.2
3.4
0.3
1.0
0.1
0 to 0.4
6.0
0.2
0.8
0.1
R = 0.5
R = 0.5
1.0
0.1
0.4
0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54
0.3
1.4
0.1
5.08
0.5
1
2
3
1.5
0.1
2.0
0.5
10.0
0.3
1.5
+0 0.4
3.0
+0.4 0.2
4.4
0.5
4.4
0
.
5
14.4
0.5
Rank
Q
P
h
FE1
90 to 180
130 to 260
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Note) The part number in the parenthesis shows conventional part number.
2SB0936, 2SB0936A
2
SJD00017BED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
0
160
40
120
80
0
10
20
30
40
50
(1)T
C
=Ta
(2)With a 50
502mm
Al heat sink
(3)Without heat sink
(P
C
=1.3W)
(1)
(3)
(2)
Collector power dissipation P
C
(W)
Ambient temperature T
a
(
C)
0
0
-12
-2
-10
-4
-8
-6
-12
-10
-8
-6
-4
-2
T
C
=25C
80mA
60mA
50mA
40mA
35mA
20mA
15mA
30mA
25mA
10mA
5mA
I
B
=100mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
- 0.01
- 0.1
-1
-10
- 0.1
-1
-10
I
C
/I
B
=30
T
C
=100C
25C
25C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
- 0.01
- 0.1
-1
-10
-1
- 0.1
-10
I
C
/I
B
=30
T
C
=25C
25C
100C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
- 0.1
-1
-10
-100
1
10
Forward current transfer ratio h
FE
Collector current I
C
(A)
10
2
10
4
10
3
V
CE
=2V
T
C
=100C
25C
25C
0.01
0.1
1
10
1
10
Transition frequency f
T
(MHz)
Collector current I
C
(A)
10
2
10
4
10
3
V
CE
=10V
f=10MHz
T
C
=25C
- 0.1
-1
-10
-100
1
10
10
2
10
3
10
4
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
C
ob
V
CB
t
on
, t
stg
, t
f
I
C
Safe operation area
0.01
10
1
0.1
0
-8
-2
-6
-4
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30
(I
B1
=I
B2
)
V
CC
=20V
T
C
=25C
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
s)
Collector current I
C
(A)
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Non repetitive pulse
T
C
=25C
t=10ms
t=1ms
I
CP
I
C
t=300ms
2SB0936A
2SB0936
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and semiconductors described in this material
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product or technologies as described in this material.
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electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
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2002 JUL
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