1
Power Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s
Features
q
High-speed switching
q
High collector to base voltage V
CBO
q
Low collector to emitter saturation voltage V
CE(sat)
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
CP
I
C
P
C
T
j
T
stg
Ratings
1000
500
10
5
40
2
150
55 to +150
Unit
V
V
A
A
W
C
C
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 1A
I
C
= 3A, I
B
= 0.6A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 0.6A, I
B2
= 0.6A,
V
CC
= 250V
min
20
typ
8
max
100
100
40
1
1.5
3
1.0
Unit
A
A
V
MHz
s
s
s
Unit: mm
1:Base
2:Collector
3:Emitter
TO220D Full Pack Package
1
9.9
0.3
15.0
0.5
13.7
0.2
4.2
0.2
4.6
0.2
2.9
0.2
0.8
0.1
1.4
0.2
2
3
3.2
0.1
2.6
0.1
0.55
0.15
2.54
0.3
5.08
0.5
3.0
0.5
1.6
0.2
2
Power Transistors
2SC4898
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
Area of safe operation (ASO)
Area of safe operation, reverse bias ASO
R
th(t)
-- t
0
12
10
8
2
6
4
0
10
8
6
4
2
9
7
5
3
1
T
C
=25C
0.6A
0.5A
0.4A
0.3A
0.2A
0.1A
I
B
=0.7A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=5
T
C
=25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
1000
100
10
3
30
300
T
C
=25C
V
CE
=5V
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
10
100
1000
3
30
300
0.001
0.01
0.1
1
100
10
10ms
1s
1ms
t=0.5ms
I
CP
I
C
Non repetitive pulse
T
C
=25C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
1200
1000
800
200
600
400
0
6
5
4
3
2
1
I
C
/I
B
=5
I
B1
=I
B2
L
coil
=100
H
T
C
=25C
<1mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
1
3
0.3
10
30
100
300
10
1
0.3
3
30
Ta=25C
(1) Without heat sink
(2) With a 100
80
t2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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