1
Transistor
2SD1330
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Low ON resistance R
on
.
q
High foward current transfer ratio h
FE
.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC71
3:Emitter
M Type Mold Package
6.9
0.1
0.55
0.1
0.45
0.05
1.0
0.1
1.0
2.5
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
0.1
2.0
0.2
2.4
0.2
1.25
0.05
4.1
0.2
4
.5
0.1
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
12
1
0.5
600
150
55 ~ +150
Unit
V
V
V
A
A
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
*3
Conditions
V
CB
= 25V, I
C
= 0
I
C
= 10
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
25
20
12
200
60
typ
0.13
200
10
1.0
max
100
800
0.4
1.2
Unit
nA
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
R
S
T
h
FE1
200 ~ 350
300 ~ 500
400 ~ 800
*2
Pulse measurement
*3
R
on
Measurement circuit
V
B
I
B
=1mA
R
on
=
!
1000(
)
f=1kHz
V=0.3V
1k
V
A
V
V
V
A
V
B
V
B
2
Transistor
2SD1330
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
R
on
-- I
B
0
6
5
4
1
3
2
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25C
2.5mA
2.0mA
1.5mA
0.5mA
1.0mA
3.0mA
3.5mA
I
B
=4.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=25
25C
25C
Ta=75C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
1200
1000
800
600
400
200
V
CE
=2V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
400
300
100
250
350
200
50
150
V
CB
=10V
Ta=25C
Emitter current I
E
(A)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
24
20
16
12
8
4
I
E
=0
Ta=25C
f=1MHz
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
f=1kHz
V=0.3V
V
B
R
on
measuring circuit
I
B
=1mA
V
A
V
Base current I
B
(mA)
ON resistance R
on
(
)
0
160
40
120
80
140
20
100
60
0
1000
800
600
400
200
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
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