1
Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
s
Features
q
High foward current transfer ratio h
FE
q
High collector to base voltage V
CBO
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
200
150
200
5
10
6
60
3
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
V
CEO(sus)
V
EBO
h
FE
*
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
I
C
= 2A, L = 10mH
I
E
= 0.1A, I
C
= 0
V
CE
= 2V, I
C
= 2A
I
C
= 3A, I
B
= 0.06A
I
C
= 3A, I
B
= 0.06A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
min
150
5
700
typ
15
max
100
10000
1.5
2.5
Unit
A
V
V
V
V
MHz
2SD1457
2SD1457A
T
C
=25
C
Ta=25
C
Unit: mm
Internal Connection
*
h
FE
Rank classification
Rank
Q
P
O
h
FE
700 to 2500 2000 to 5000 4000 to 10000
1:Base
2:Collector
3:Emitter
TOP3 Full Pack Package(a)
15.0
0.3
21.0
0.5
16.2
0.5
12.5
Solder Dip
3.5
0.7
15.0
0.2
5.0
0.2
11.0
0.2
10.9
0.5
5.45
0.3
3
2
1
1.1
0.1
2.0
0.2
0.6
0.2
2.0
0.1
3.2
0.1
3.2
B
C
E
2
Power Transistors
2SD1457, 2SD1457A
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
Area of safe operation (ASO)
R
th(t)
-- t
0
150
125
100
25
75
50
0
100
80
60
40
20
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) With a 50
50
2mm
Al heat sink
(P
C
=3.0W)
(1)
(2)
(3)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
6
5
4
1
3
2
0
5
4
3
2
1
T
C
=25C
I
B
=2.0mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=50
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=50
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=2V
25C
25C
T
C
=100C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
0.1ms
20ms
3ms
t=1ms
2SD1457
2SD1457A
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
3
10
2
10
2
1
10
1
10
10
3
10
4
10
1
1
10
10
2
10
3
(1)
(2)
(1) P
T
=10V
0.3A (3W) and without heat sink
(2) P
T
=10V
1.0A (10W) and with a 100
100
2mm Al heat sink
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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