1
Transistor
2SD1478, 2SD1478A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
s
Features
q
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h
FE
= 4000 to 20000.
q
A shunt resistor is omitted from the driver.
s
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
750
500
200
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SD1478
2SD1478A
2SD1478
2SD1478A
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
V
CB
= 10V, I
E
= 50mA, f = 200MHz
min
30
60
25
50
5
4000
typ
200
max
100
100
20000
2.5
3.0
Unit
nA
nA
V
V
V
V
V
MHz
*2
Pulse measurement
2SD1478
2SD1478A
2SD1478
2SD1478A
Unit: mm
1:Base
JEDEC:TO236
2:Emitter
EIAJ:SC59
3:Collector
Mini Type Package
2.8
+0.2
0.3
1.5
+0.25
0.05
0.65
0.15
0.65
0.15
3
1
2
0.95
0.95
1.9
0.2
0.4
+0.1
0.05
1.1
+0.2
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+0.1
0.06
1.45
0.1 to 0.3
2.9
+0.2
0.05
Marking symbol :
2N
(2SD1478)
2O
(2SD1478A)
Internal Connection
B
C
E
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
4000 ~ 10000 8000 ~ 20000
2SD1478
2NQ
2NR
2SD1478A
2OQ
2OR
Marking
Symbol
2
Transistor
2SD1478, 2SD1478A
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
0
200
160
40
120
80
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0.1
1
10
100
0.3
3
30
0.1
0.3
1
3
10
30
100
300
1000
Ta=25C
I
B
=50
A
45
A
40
A
35
A
5
A
10
A
15
A
20
A
25
A
30
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
25C
25C
Ta=75C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
Ta=25C
25C
75C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
6
5
4
3
2
1
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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