1
Power Transistors
2SD1611
Silicon NPN triple diffusion planar type Darlington
For power amplification
s
Features
q
High foward current transfer ratio h
FE
q
High collector to base voltage V
CBO
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
500
400
5
10
6
40
1.3
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
V
CEO(sus)
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 350V, I
E
= 0
I
C
= 2A, L = 10mH
I
E
= 0.1A, I
C
= 0
V
CE
= 2V, I
C
= 2A
I
C
= 3A, I
B
= 0.06A
I
C
= 3A, I
B
= 0.06A
V
CE
= 10V, I
C
= 1A, f = 1MHz
min
400
5
500
typ
15
max
100
1.5
2.5
Unit
A
V
V
V
V
MHz
T
C
=25
C
Ta=25
C
Internal Connection
B
C
E
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
0.2
6.0
0.5
10.0
0.3
10.5min.
2.0
1.5
0.1
1.5max.
0.8
0.1
5.08
0.5
2.54
0.3
1.1max.
0.5max.
1.0
0.1
3.4
0.3
2
1
3
Unit: mm
8.5
0.2
4.4
0.5
2.0
10.0
0.3
14.7
0.5
4.4
0.5
6.0
0.3
3.4
0.3
2.54
0.3
5.08
0.5
1.0
0.1
0.8
0.1
1.5
+0
0.4
3.0
+0.4
0.2
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
2
Power Transistors
2SD1611
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
Area of safe operation (ASO)
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
80
60
20
50
70
40
10
30
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
6
5
4
1
3
2
0
5
4
3
2
1
T
C
=25C
I
B
=8mA
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=50
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=50
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=2V
25C
25C
T
C
=100C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
1
10
10
2
10
3
10
4
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=10
s
300ms
1ms
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
10
2
10
1
1
10
10
3
10
2
(1) Without heat sink
(2) With a 50
50
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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