Power Transistors
1
Publication date: March 2003
SJD00207AED
2SD1633
Silicon NPN triple diffusion planar type darlington
For voltage switching
Features
High-speed switching
Satisfactory linearity of forward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings T
C
= 25C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter sustaining voltage
*2
V
CEO(SUS)
I
C
= 0.2 A, L = 25 mH
100
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 100 V, I
E
= 0
100
A
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
= 100 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 7 V, I
C
= 0
5
mA
Forward current transfer ratio
*1
h
FE
V
CE
= 3 V, I
C
= 3 A
1 500
15 000
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 3 A, I
B
= 3 mA
1.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 3 A, I
B
= 3 mA
2.0
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 1 A, f = 1 MHz
15
MHz
Turn-on time
t
on
I
C
= 3 A, I
B1
= 3 mA, I
B2
= -3 mA
3
s
Storage time
t
stg
V
CC
= 50 V
5
s
Fall time
t
f
3
s
Electrical Characteristics T
C
= 25C 3C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
100
V
Collector-emitter voltage (Base open)
V
CEO
100
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
5
A
Peak collector current
I
CP
8
A
Base current
I
B
0.5
A
Collector power dissipation
P
C
30
W
T
a
= 25C
2.0
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: V
CEO(SUS)
test circuit
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
(4.0)
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.3
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
B
C
E
X
L
15 V
6 V
1
120
Y
G
50 Hz/60 Hz
mercury relay
Rank
Q
P
h
FE
1 500 to 6 000 5 000 to 15 000
2SD1633
2
SJD00207AED
V
BE(sat)
I
C
h
FE
I
C
t
on
, t
stg
, t
f
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
Safe operation area
R
th
t
0
10
30
20
40
0
150
25
125
50
100
75
Collector power dissipation P
C
(W
)
Ambient temperature T
a
(
C)
(1)T
C
=Ta
(2)With a 100
1002mm
Al heat sink
(3)With a 50
502mm
Al heat sink
(4)Without heat sink
(P
C
=2W)
(1)
(2)
(3)
(4)
0
6
1
5
2
4
3
0
2
4
6
10
8
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
T
C
=25C
I
B
=7.0mA
1.0mA
1.5mA
2.0mA
3.0mA
5.0mA
0.5mA
0.3mA
0.2mA
0.1mA
0.01
0.01
0.1
1
10
100
0.1
1
10
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
I
C
/I
B
=1000
25C
25C
T
C
=100C
0.01
0.01
0.1
1
10
100
0.1
1
10
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
I
C
/I
B
=1000
T
C
=25C
25C
100C
0.1
1
10
100
10
10
2
10
3
10
4
10
5
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
=3V
25C
25C
T
C
=100C
0.01
0.1
1
10
100
0
8
2
6
4
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
s)
Collector current I
C
(A)
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=1000
(I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
t
stg
t
f
t
on
0.01
1
0.1
1
10
100
10
100
1000
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=150s
t=10ms
DC
t=1ms
(1)
(2)
(1)Without heat sink
(2)With a 100
1002mm Al heat sink
1
10
-2
10
-1
10
10
2
10
3
10
4
10
2
10
1
10
-1
10
-4
10
-3
10
-2
Thermal resistance R
th
(
C/W)
Time t (s)
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2002 JUL
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