1
Power Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching
Complementary to 2SB1148 and 2SB1148A
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
q
High-speed switching
q
Satisfactory linearity of foward current transfer ratio h
FE
q
Large collector current I
C
q
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
40
50
20
40
5
20
10
15
1.3
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1752
2SD1752A
2SD1752
2SD1752A
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 40V, I
E
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 3A
I
C
= 10A, I
B
= 0.33A
I
C
= 10A, I
B
= 0.33A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 3A, I
B1
= 0.1A, I
B2
= 0.1A,
V
CC
= 20V
min
20
40
45
90
typ
120
200
0.3
0.4
0.1
max
50
50
50
260
0.6
1.5
Unit
A
A
V
V
V
MHz
pF
s
s
s
2SD1752
2SD1752A
2SD1752
2SD1752A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7.2
0.3
7.0
0.3
3.0
0.2
3.5
0.2
10.0
+0.3
0.
0.8
0.2
1.0
0.2
4.6
0.4
2
1
3
1.1
0.1
0.75
0.1
2.3
0.2
0.85
0.1
0.4
0.1
7.0
0.3
0.75
0.1
2.3
0.2
4.6
0.4
1.1
0.1
10.2
0.3
7.2
0.3
2.0
0.2
0.9
0.1
3.5
0.2
2.5
0.2
1.0
1.0
2.5
0.2
3.0
0.2
1.0 max.
1
2
3
0 to 0.15
0 to 0.15
2.5
0.5 max.
2
Power Transistors
2SD1752, 2SD1752A
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C
=Ta
(2) Without heat sink
(P
C
=1.3W)
(1)
(2)
(1)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
6
5
4
1
3
2
0
10
8
6
4
2
T
C
=25C
I
B
=100mA
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
30
10
1
0.3
3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=20
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
30
10
1
0.3
3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=20
25C
25C
T
C
=100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.1
30
10
1
0.3
3
1
3
10
30
100
300
1000
V
CE
=2V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE
=10V
f=1MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
0
5
4
1
3
2
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30(I
B1
=I
B2
)
V
CC
=20V
T
C
=25C
t
stg
t
f
t
on
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=10ms
1ms
300ms
2SD1752
2SD1752A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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