1
Power Transistors
2SD1773
Silicon NPN triple diffusion planar type Darlington
For midium speed switching
Complementary to 2SB1193
s
Features
q
High foward current transfer ratio h
FE
q
High-speed switching
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
120
120
7
12
8
50
2
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
V
CEO(sus)
V
EBO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 120V, I
E
= 0
V
CE
= 100V, I
B
= 0
I
C
= 2A, L = 10mH
I
E
= 50mA, I
C
= 0
V
CE
= 3V, I
C
= 4A
I
C
= 4A, I
B
= 8mA
I
C
= 8A, I
B
= 80mA
I
C
= 4A, I
B
= 8mA
I
C
= 8A, I
B
= 80mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 8mA, I
B2
= 8mA,
V
CC
= 50V
min
120
7
1000
typ
20
0.7
6
2
max
100
10
20000
1.5
3
2
3.5
Unit
A
A
V
V
V
V
V
V
MHz
s
s
s
T
C
=25
C
Ta=25
C
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
Unit: mm
Internal Connection
B
C
E
2
Power Transistors
2SD1773
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
80
60
20
50
70
40
10
30
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(P
C
=2W)
(1)
(2)
(3)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
10
8
6
4
2
T
C
=25C
I
B
=5mA
4mA
3mA
2mA
1mA
0.5mA
0.2mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
0.3
1
3
10
0.1
30
10
3
1
0.3
(1) I
C
/I
B
=500
(2) I
C
/I
B
=250
(3) I
C
/I
B
=100
T
C
=25C
(3)
(1)
(2)
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
0.3
1
3
10
0.1
30
10
3
1
0.3
(1) I
C
/I
B
=500
(2) I
C
/I
B
=250
(3) I
C
/I
B
=100
T
C
=25C
(1)
(3)
(2)
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.1
0.3
1
3
10
100
30000
10000
3000
1000
300
V
CE
=3V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0
8
2
6
4
7
1
5
3
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=500 (I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
t
stg
t
f
t
on
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
10ms
t=1ms
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
3
10
2
10
2
1
10
1
10
10
3
10
4
10
2
10
1
1
10
10
2
(1) Without heat sink
(2) With a 100
100
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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