Transistors
1
Publication date: August 2004
SJC00313AED
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
Features
Low ON resistance R
on
High forward current transfer ratio h
FE
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
25
V
Collector current
I
C
300
mA
Peak collector current
I
CP
500
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
20
V
Base-emitter voltage
V
BE
V
CE
= 2 V, I
C
= 4 mA
0.6
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 50 V, I
E
= 0
0.1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 25 V, I
C
= 0
0.1
A
Forward current transfer ratio
*1
h
FE
V
CE
= 2 V, I
C
= 4 mA
500
2 500
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 30 mA, I
B
= 3 mA
0.1
V
Transition frequency
f
T
V
CB
= 6 V, I
E
= -4 mA, f = 200 MHz
80
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
7
pF
(Common base, input open circuited)
ON resistance
*2
R
on
1.0
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: R
on
Measuremet circuit
Rank
S
T
No rank
h
FE
500 to 1 500
800 to 2 500
500 to 2 500
V
V
1 k
R
on
= V
B
1 000 ()
V
A
- V
B
f
= 1 kHz
V
= 0.3 V
V
B
I
B
= 1 mA
V
A
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
JEDEC: SOT-346
Mini3-G1 Package
Marking symbol: 3W
0.40
+0.10
0.05
(0.65)
1.50
+0.25 0.05
2.8
+0.2 0.3
2
1
3
(0.95) (0.95)
1.9
0.1
2.90
+0.20
0.05
0.16
+0.10
0.06
0.4
0.2
5
10
0 to 0.1
1.1
+0.2 0.1
1.1
+0.3 0.1
Product of no-rank classification is not marked.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
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information as described in this material.
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tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP
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