1
Transistor
2SD1979
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
s
Features
q
Low ON resistance R
on
.
q
High foward current transfer ratio h
FE
.
q
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC70
3:Collector
SMini Type Package
2.1
0.1
1.3
0.1
0.9
0.1
0.7
0.1
0.3
+0.1
0
0.15
+0.1
0.05
2.0
0.2
1.25
0.1
0.425
0.425
1
3
2
0.65
0.2
0
.65
0 to 0.1
0.2
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
50
20
25
500
300
150
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
ON resistanse
Symbol
I
CBO
I
EBO
V
CEO
h
FE
*1
V
CE(sat)
V
BE
f
T
C
ob
R
on
*2
Conditions
V
CB
= 50V, I
E
= 0
V
EB
= 25V, I
C
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 2V, I
C
= 4mA
I
C
= 30mA, I
B
= 3mA
V
CE
= 2V, I
C
= 4mA
V
CB
= 6V, I
E
= 4mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
20
500
typ
0.6
80
4.5
1.0
max
1
1
2500
0.1
Unit
A
A
V
V
V
MHz
pF
*1
h
FE
Rank classification
*2
R
on
Measurement circuit
V
B
I
B
=1mA
R
on
=
!
1000(
)
f=1kHz
V=0.3V
1k
V
A
V
V
V
A
V
B
V
B
Rank
S
T
h
FE
500 ~ 1500
800 ~ 2500
Marking Symbol
3WS
3WT
Marking symbol :
3W
2
Transistor
2SD1979
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
24
20
16
12
8
4
Ta=25C
I
B
=10
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
1.2
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
V
CE
=2V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Base current I
B
(mA
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
25C
25C
Ta=75C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0
2400
2000
1600
1200
800
400
V
CE
=2V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
3
10
30
100
0
120
100
80
60
40
20
V
CB
=6V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
12
10
8
6
4
2
f=1MHz
I
E
=0
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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