Transistors
1
2SD1992A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1321A
I Features
Low collector to emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
I Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
7
V
Peak collector current
I
CP
1
A
Collector current
I
C
500
mA
Collector power dissipation
P
C
600
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
A
I
CEO
V
CE
= 20 V, I
B
= 0
1
A
Collector to base voltage
V
CBO
I
C
= 10 A, I
E
= 0
60
V
Collector to emitter voltage
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Emitter to base voltage
V
EBO
I
E
= 10 A, I
C
= 0
7
V
Forward current transfer ratio
h
FE1
*2
V
CE
= 10 V, I
C
= 10 mA
85
340
h
FE2
*1
V
CE
= 10 V, I
C
= 500 mA
40
90
Collector to emitter saturation voltage
*1
V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA
0.35
0.6
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -10 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
6
15
pF
I Electrical Characteristics T
a
= 25C 3C
Unit: mm
6.9
0.1
1.05
0.05
2.5
0.1
3.5
0.1
14.5
0.5
(1.45)
0.8
0.7
4.0
0.15
0.85
0.8
1.0
0.65 max.
0.45
+0.1
-0.05
0.45
+
0.1
-
0.05
2.5
0.5 2.50.5
2.5
0.1
1
2
3
1.2
0.1
0.65
max.
0.45
0.1
0.05
+
-
(HW Type)
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
Rank
Q
R
S
No-rank
h
FE1
85 to 170
120 to 240
170 to 340
85 to 340
Note) *1: Pulse measurement
*2: Rank classification
Product of no-rank is not classified and have no indication for rank.
2SD1992A
Transistors
2
P
C
T
a
I
C
V
CE
I
C
I
B
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
V
CER
R
BE
0
0
160
40
120
80
140
20
100
60
200
600
400
800
100
500
300
700
Ambient temperature T
a
(
C)
Collector power dissipation P
C
(mW
)
0
20
4
8
16
12
18
2
6
14
10
0
800
700
600
500
400
300
200
100
I
B
= 10 mA 9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
0
10
8
6
4
2
9
7
5
3
1
0
800
700
600
500
400
300
200
100
Base current I
B
(mA)
V
CE
= 10 V
T
a
= 25C
Collector current
I
C
(mA
)
0.01
0.01
0.1
1
10
100
0.1
1
10
0.03
0.3
3
30
0.03
0.3
3
Collector to emitter saturation voltage
V
CE(sat)
(V
)
Collector current I
C
(A)
I
C
/ I
B
= 10
25
C
-25C
T
a
= 75C
0.01
0.01
0.03
0.1
1
10
0.03
0.3
3
30
100
0.1
0.3
1
3
10
Base to emitter saturation voltage
V
BE(sat)
(V
)
Collector current I
C
(A)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
0.01
300
250
200
150
100
50
0.1
1
10
0.03
0.3
3
Forward current transfer ratio h
FE
V
CE
= 10 V
Collector current I
C
(A)
T
a
= 75C
25
C
-25C
-1
-3
-10
-30
-100
0
240
200
160
120
80
40
-2
-20
-5
-50
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
V
CB
= 10 V
T
a
= 25C
0
1
12
10
8
6
4
2
3
10
30
100
2
20
5
50
Collector output capacitance C
ob
(
pF
)
Collector to base voltage V
CB
(V)
I
E
= 0
f
= 1 MHz
T
a
= 25C
1
3
10
30
100
300
1000
0
120
100
80
60
40
20
Collector to emitter voltage V
CER
(V
)
Base to emitter resistance R
BE
(k
)
I
C
= 2 mA
T
a
= 25C
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