1
Power Transistors
Publication date: March 2003
SJD00071BED
2SB1416
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD2136
Features
High forward current transfer ratio h
FE
which has satisfactory
linearity
Low collector-emitter saturation voltage V
CE(sat)
Allowing automatic insertion with radial taping
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
7.5
0.2
0.65
0.1
0.7
0.1
1.15
0.2
2.5
0.2
2.5
0.2
0.85
0.1
1.0
0.1
0.7
0.1
1.15
0.2
0.5
0.1
1
0.8 C
2
3
0.4
0.1
4.5
0.2
0.8 C
0.8 C
3.8
0.2
16.0
1.0
10.8
0.2
2.05
0.2
90
2.5
0.1
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-60
V
Collector-emitter voltage (Base open)
V
CEO
-60
V
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-3
A
Peak collector current
I
CP
-5
A
Collector power dissipation
P
C
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
h
FE1
40 to 90
70 to 150
120 to 250
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= -30 mA, I
B
= 0
-60
V
Base-emitter voltage
V
BE
V
CE
= -4 V, I
C
= -3 A
-1.8
V
Collector-emitter cutoff current (E-B short)
I
CES
V
CE
= -60 V, V
BE
= 0
-200
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -30 V, I
B
= 0
-300
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -5 V, I
C
= 0
-1
mA
Forward current transfer ratio
h
FE1
*
V
CE
= -4 V, I
C
= -1 A
40
250
h
FE2
V
CE
= -4 V, I
C
= -3 A
10
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -3 A, I
B
= - 0.375A
-1.2
V
Transition frequency
f
T
V
CB
= -5 V, I
E
= 0.1 A, f = 200 MHz
270
MHz
Turn-on time
t
on
I
C
= -1 A, I
B1
= - 0.1 A, I
B2
= 0.1 A
0.5
s
Storage time
t
stg
1.2
s
Fall time
t
f
0.3
s
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
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tual property right or any other rights owned by our company or a third party, nor grants any license.
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product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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(7) When using products for which damp-proof packing is required, observe the conditions (including
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2002 JUL
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