Transistors
1
Publication date: January 2003
SJC00257BED
2SD2345
Silicon NPN epitaxial planar type
For low-frequency amplification
Features
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
High emitter-base voltage (Collector open) V
EBO
Low noise voltage NV
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
40
V
Emitter-base voltage (Collector open)
V
EBO
15
V
Collector current
I
C
50
mA
Peak collector current
I
CP
100
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
40
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
15
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
100
nA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 20 V, I
B
= 0
1
A
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 2 mA
400
2 000
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA
0.05
0.20
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -2 mA, f = 200 MHz
120
MHz
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
1.6
0.15
1.6
0.1
5
1
1.0
0.1
0.75
0.15
0.45
0.1
0 to 0.1
(0.5)
(0.3)
(0.5)
0.8
0.1
(0.4)
0.15
+0.1
0.05
0.2
+0.1
0.05
1
2
3
0.2
0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
Rank
R
S
T
h
FE
400 to 800
600 to 1 200
1 000 to 2 000
Marking symbol
1Z
2SD2345
2
SJC00257BED
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
I
C
V
BE
C
ob
V
CB
NV
I
C
NV
V
CE
0
160
40
120
80
140
20
100
60
0
150
125
100
75
50
25
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
12
10
8
2
6
4
0
160
120
40
100
140
80
20
60
T
a
= 25C
20
A
30
A
40
A
50
A
60
A
70
A
80
A
90
A
10
A
I
B
= 100 A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
V
CE
= 10 V
T
a
= 75C
-25C
25
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
I
C
/ I
B
= 10
25
C
-25C
T
a
= 75C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0.1
1
10
100
0
1 800
1 500
1 200
900
600
300
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
- 0.1
-1
-10
-100
0
250
200
150
100
50
V
CB
= 10 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
1
10
100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0
8
6
2
5
7
4
1
3
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
0.01
0.1
1
0
100
80
60
40
20
V
CE
= 10 V
G
V
= 80 dB
Function
= FLAT
T
a
= 25C
5 k
R
g
= 100 k
22 k
Noise voltage NV
(mV
)
Collector current I
C
(mA)
1
10
100
0
100
80
60
40
20
I
C
= 1 mA
G
V
= 80 dB
Function
= FLAT
T
a
= 25C
5 k
R
g
= 100 k
22 k
Noise voltage NV
(mV
)
Collector-emitter voltage V
CE
(V)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
PDF 
ZIP