1
Transistor
2SD2359
Silicon NPN epitaxial planer type
For low-frequency amplification
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC62
3:Emitter
Mini Power Type Package
4.5
0.1
2.6
0.1
2.5
0.1
0.4max.
1.0
+0.1
0.2
4.0
+0.25
0.20
3.0
0.15
1.5
0.1
0.4
0.08
0.5
0.08
1.5
0.1
0.4
0.04
1.6
0.2
45
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
20
20
5
1.2
1
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 14V, I
E
= 0
I
C
= 10
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 2V, I
C
= 100mA
I
C
= 500mA, I
B
= 10mA
V
CB
= 6V, I
E
= 50mA, f = 200MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
min
20
20
5
200
typ
0.11
100
23
max
1
800
0.2
Unit
A
V
V
V
V
MHz
pF
Marking symbol :
1O
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2
Transistor
2SD2359
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25C
2.5mA
2.0mA
1.5mA
1.0mA
3.0mA
3.5mA
I
B
=4.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
2.4
2.0
1.6
0.4
1.2
0.8
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=2V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=50
Ta=75C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
600
500
400
300
200
100
Ta=75C
25C
25C
V
CE
=2V
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
240
200
160
120
80
40
V
CB
=6V
f=200MHz
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
60
50
40
30
20
10
I
E
=0
f=200MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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