Power Transistors
360
2SD2374, 2SD2374A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1548 and 2SB1548A
I Features
High forward current transfer ratio h
FE
which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings T
C
= 25C
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Unit: mm
Note) *: Rank classification
Rank
Q
P
h
FE1
70 to 150
120 to 250
Parameter
Symbol
Rating
Unit
Collector to base
2SD2374
V
CBO
60
V
voltage
2SD2374A
80
Collector to
2SD2374
V
CEO
60
V
emitter voltage
2SD2374A
80
Emitter to base voltage
V
EBO
6
V
Peak collector current
I
CP
5
A
Collector current
I
C
3
A
Collector power
T
C
= 25
C
P
C
25
W
dissipation
T
a
= 25
C
2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
I Electrical Characteristics T
C
= 25C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff
2SD2374
I
CES
V
CE
= 60 V, V
BE
= 0
200
A
current
2SD2374A
V
CE
= 80 V, V
BE
= 0
200
Emitter cutoff
2SD2374
I
CEO
V
CE
= 30 V, I
B
= 0
300
A
current
2SD2374A
V
CE
= 60 V, I
B
= 0
300
Emitter cutoff current
I
EBO
V
EB
= 6 V, I
C
= 0
1
mA
Collector to emitter voltage
V
CEO
I
C
= 30 mA, I
B
= 0
60
V
Forward current transfer ratio
h
FE1
*
V
CE
= 4 V, I
C
= 1 A
70
250
h
FE2
V
CE
= 4 V, I
C
= 3 A
10
Base to emitter voltage
V
BE
V
CE
= 4 V, I
C
= 3 A
1.8
V
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 3 A, I
B
= 0.375 A
1.2
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 0.5 A, f = 10 MHz
30
MHz
Turn-on time
t
on
I
C
= 1 A, I
B1
= 0.1 A, I
B2
=
- 0.1 A,
0.5
s
Storage time
t
stg
V
CC
= 50 V
2.5
s
Fall time
t
f
0.4
s
1.4
0.2
1.6
0.2
0.8
0.1
0.55
0.15
2.54
0.30
5.08
0.50
1
2
3
2.6
0.1
2.9
0.2
4.6
0.2
3.2
0.1
3.0
0.5
9.9
0.3
15.0
0.5
13.7
0.2
4.2
0.2
Solder Dip
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2001 MAR
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