Power Transistors
1
Publication date: February 2003
SJD00269BED
2SD2479
Silicon NPN epitaxial planar type
For low-frequency amplification
Features
High forward current transfer ratio h
FE
Allowing supply with the radial taping
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 100
A, I
E
= 0
120
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
100
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 100
A, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 25 V, I
E
= 0
0.1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 4 V, I
C
= 0
1
A
Forward current transfer ratio
*1, 2
h
FE
V
CE
= 10 V, I
C
= 1 A
4 000
40 000
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 1 A, I
B
= 1 mA
1.5
V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
= 1 A, I
B
= 1 mA
2
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
150
MHz
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
120
V
Collector-emitter voltage (Base open)
V
CEO
100
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
2
A
Peak collector current
I
CP
3
A
Collector power dissipation
P
C
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
7.5
0.2
0.65
0.1
0.7
0.1
1.15
0.2
2.5
0.2
2.5
0.2
0.85
0.1
1.0
0.1
0.7
0.1
1.15
0.2
0.5
0.1
1
0.8 C
2
3
0.4
0.1
4.5
0.2
0.8 C
0.8 C
3.8
0.2
16.0
1.0
10.8
0.2
2.05
0.2
90
2.5
0.1
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
B
200
C
E
2SD2479
2
SJD00269BED
V
BE(sat)
I
C
V
CE(sat)
I
C
h
FE
I
C
P
C
T
a
I
C
V
CE
I
C
V
BE
0
0
160
40
120
80
1.6
0.8
Ambient temperature T
a
(
C)
Collector power dissipation P
C
(mW)
1.2
0.4
0
0
12
2
10
4
8
6
4
3
2
1
I
B
= 1.0 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0.1 mA
T
a
= 25C
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
0
0.4
0.8
1.2
0
1
2
3
V
CE
= 10 V
T
a
= 85C
-25C
25
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.1
1
1
10
10
10
2
10
4
10
3
I
C
/ I
B
= 1 000
T
a
= -25C
25
C
85
C
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
0.1
10
1
1
100
10
10
2
10
4
10
3
I
C
/ I
B
= 1 000
T
a
= 85C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
C
ob
V
CB
0
2 000
4 000
8 000
6 000
10 000
V
CE
= 10 V
T
a
= 85C
25
C
-25C
1
10
10
2
10
4
10
3
Forward current transfer ratio h
FE
Collector current I
C
(A)
10
100
1 000
0
10
20
30
40
f
= 1 MHz
T
a
= 25C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
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the latest specifications satisfy your requirements.
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mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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2002 JUL
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