1
Power Transistors
2SD2486
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s
Features
q
High forward current transfer ratio h
FE
which has satisfactory
linearity
q
Low collector to emitter saturation voltage V
CE(sat)
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
BP
P
C
T
j
T
stg
Ratings
60
60
7
8
4
2
25
2
150
55 to +150
Unit
V
V
V
A
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.8A
V
CE
= 2V, I
C
= 2A
I
C
= 2A, I
B
= 50mA
I
C
= 2A, I
B
= 50mA
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 2A, I
B1
= 50mA, I
B2
= 50mA,
V
CC
= 50V
min
60
500
60
typ
1000
70
0.5
3.6
1.1
max
10
10
2000
0.5
1.5
Unit
A
A
V
V
V
MHz
s
s
s
*
h
FE1
Rank classification
Rank
Q
R
h
FE1
500 to 1200 800 to 2000
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
2
Power Transistors
2SD2486
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
30
25
20
15
10
5
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) With a 50
50
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
3.0
2.5
2.0
1.5
1.0
0.5
I
B
=5.0mA
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
4.0mA
T
C
=25C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=40
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=40
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=2V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=10V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
5
4
1
3
2
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=40 (I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
t
stg
t
f
t
on
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
10ms
t=1ms
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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