241
Silicon Junction FETs (Small Signal)
unit: mm
2SK0065
(2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
I
Features
G Diode is connected between gate and source
G Low noise voltage
1: Drain
2: Gate
3: Source
NS-B1 Package
I
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DSO
V
GDO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
Ratings
12
-12
2
2
2
20
-10 to +70
-20 to +150
Unit
V
V
mA
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta = 25C)
Parameter
Drain to Source cut-off current
Mutual conductance
Noise figure
Voltage gain
Symbol
I
DSS
*
g
m
NV
G
V1
*
G
V2
*
G
V3
*
Conditions
V
DS
= 4.5V, V
GS
= 0, R
S
= 2.2k
1%
V
DS
= 4.5V, V
GS
= 0
R
S
= 2.2k
1%, f = 1kHz
V
DS
= 4.5V, R
S
= 2.2k
1%
C
G
= 10pF, A-curve
V
DS
= 4.5V, R
S
= 2.2k
1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
V
DS
= 12V, R
S
= 2.2k
1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
V
DS
= 1V, R
S
= 2.2k
1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
min
0.04
300
max
0.8
4
Unit
mA
S
V
dB
dB
dB
*
I
DSS
rank classification and
G
V
value
typ
500
-10
-9.5
-11
Runk
I
DSS
(mA)
G
V1
(dB)
G
V2
(dB)
| G
V1
- G
V2
| (dB)
P
0.04 to 0.2
>
-13
>
-12
< 3
Q
0.15 to 0.8
>
-12
>
-11
< 3
Note) The part number in the parenthesis shows conventional part number.
4.0
0.2
0.75 max.
2.0
0.2
0.45
(2.5) (2.5)
0.7
0.1
2
3
1
+0.20
0.10
0.45
+0.20
0.10
7.6
3.0
0.2
(0.8)
(0.8)
15.6
0.5
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2001 MAR
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