Silicon MOSFETs (Small Signal)
1
Publication date:
August
200
2
SJF00018BED
2SK0601
(2SK601)
Silicon N-channel MOSFET
For switching
I Features
Low on-resistance R
DS(on)
High-speed switching
Allowing to be driven directly by CMOS and TTL
Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
I Absolute Maximum Ratings T
a
= 25C
Unit: mm
1: Gate
2: Drain
3: Source
MiniP3-F1 Package
I Electrical Characteristics T
a
= 25C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain to source cut-off current
I
DSS
V
DS
= 60 V, V
GS
= 0
10
A
Gate to source leakage current
I
GSS
V
GS
= 20 V, V
DS
= 0
0.1
A
Drain to source breakdown voltage
V
DSS
I
DS
= 100 A, V
GS
= 0
80
V
Gate threshold voltage
V
th
I
D
= 1 mA, V
DS
= V
GS
1.5
3.5
V
Drain to source on-resistance
*1
R
DS(on)
I
D
= 0.5 A, V
GS
= 10 V
2
4
Forward transfer admittance
Y
fs
I
D
= 0.2 A, V
DS
= 15 V, f = 1 kHz
300
mS
Input capacitance (common source)
C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
45
pF
Output capacitance (common source)
C
oss
30
pF
Reverse transfer capacitance (common source)
C
rss
8
pF
Turn-on time
*2
t
on
15
ns
Turn-off time
*2
t
off
20
ns
Parameter
Symbol
Rating
Unit
Drain to source voltage
V
DS
80
V
Gate to source voltage
V
GSO
20
V
Drain current
I
D
0.5
A
Max drain current
I
DP
1
A
Allowable power dissipation
*
P
D
1
W
Channel temperature
T
ch
150
C
Storage temperature
T
stg
-55 to +150
C
Note) *1: Pulse measurement
*2: t
on
, t
off
measurement circuit
Marking Symbol: O
Note) *: PC board: Copper foil of the drain portion should have a area of
1 cm
2
or more and the board thickness should be 1.7 mm.
V
in
= 10 V
t
= 1 S
f
= 1 MHz
50
68
t
on
t
off
V
in
10%
90%
10%
90%
V
out
V
in
V
out
V
DD
= 30 V
V
out
4.5
0.1
3.0
0.15
45
2.6
0.1
0.4 max.
1.6
0.2
1.5
0.1
4.0
2.5
0.1
3
+0.25 0.20
1.0
+0.1 0.2
0.5
0.08
0.4
0.04
0.4
0.08
1
2
3
1.5
0.1
3
Note) The part number in the parenthesis shows conventional part number.
2SK0601
2
SJF00018BED
R
DS(on)
T
a
Y
fs
V
GS
C
iss
, C
oss
, C
rss
V
DS
R
DS(on)
V
GS
P
D
T
a
I
D
V
DS
I
D
V
GS
Ambient temperature T
a
(
C)
Allowable power dissipation P
D
(W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
160
120
100
140
0
Copper foil of the drain portion
should have a area of 1 cm
2
or more and the board
thickness should be 1.7 mm.
Drain to source voltage V
DS
(V)
Drain current I
D
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
0
T
a
= 25C
V
GS
= 5.5 V
5 V
4.5 V
4 V
3.5 V
3 V
Gate to source voltage V
GS
(V)
Drain current I
D
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
0
V
DS
= 10 V
T
a
= 25C
Gate to source voltage V
GS
(V)
600
500
400
300
200
100
0
1
2
3
4
5
6
0
Forward transfer admittance
Y
fs
(mS)
V
DS
= 15 V
f
= 1 kHz
T
a
= 25C
Drain to source voltage V
DS
(V)
Input capacitance (common source), output capacitance (common source),
reverse transfer capacitance (common source)
C
iss
, C
oss
, C
rss
(pF)
120
100
80
60
40
20
0
3
10
30
100
300
1 000
1
V
GS
= 0
f
= 1 MHz
T
a
= 25C
C
iss
C
oss
C
rss
Gate to source voltage V
GS
(V)
Drain to source on-resistance R
DS(on)
(
)
6
5
4
3
2
1
0
4
8
12
16
20
0
T
a
= 75C
I
D
= 500 mA
25
C
-25C
Ambient temperature T
a
(
C)
Drain to source on-resistance R
DS(on)
(
)
6
5
4
3
2
1
0
-25
0
25
50
75
-50
I
D
= 500 mA
V
GS
= 5 V
10 V
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2002 JUL
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