1
Silicon MOS FETs (Small Signal)
unit: mm
Marking Symbol: 4V
1: Gate
2: Source
EIAJ: SC-70
3: Drain
S-Mini Type Package (3-pin)
2.10.1
1.30.1
0.90.1
0.70.1
0.3
+0.1
0
0.15
+0.1
0.05
2.00.2
1.250.1
0.425
0.425
1
3
2
0.65
0.2
0.65
0 to 0.1
0.20.1
2SK1374
Silicon N-Channel MOS FET
For switching
s Features
q High-speed switching
q Wide frequency band
q Incorporating a built-in gate protection-diode
q Allowing 2.5V drive
s Absolute Maximum Ratings
(Ta = 25C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
10
50
100
150
150
-
55 to +150
Unit
V
V
mA
mA
mW
C
C
s Electrical Characteristics
(Ta = 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
*1
| Y
fs
|
C
iss
C
oss
C
rss
t
on
*2
t
off
*2
Conditions
V
DS
= 20V, V
GS
= 0
V
GS
= 10V, V
DS
= 0
I
D
= 10
A, V
GS
= 0
I
D
= 100
A, V
DS
= 5V
I
D
= 10mA, V
GS
= 2.5V
I
D
= 10mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 2.5V, R
L
= 470
V
DD
= 5V, V
GS
= 2.5 to 0V, R
L
= 470
min
50
0.5
20
typ
100
0.8
27
39
4.5
4.1
1.2
0.2
0.2
Unit
A
A
V
V
mS
pF
pF
pF
s
s
max
1
1
1.1
50
*1
Pulse measurement
*2
t
on
, t
off
measurement circuit
V
out
V
DD
= 5V
V
GS
= 2.5V
50
470
100
F
V
in
90%
10%
10%
90%
V
out
t
on
t
off
2
Silicon MOS FETs (Small Signal)
P
D
Ta
I
D
V
DS
| Y
fs
|
V
GS
C
iss
, C
oss
, C
rss
V
DS
I
D
V
GS
R
DS(on)
V
GS
V
IN
I
O
2SK1374
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Allowable power dissipation P
D
(mW
)
0
12
10
8
2
6
4
0
48
40
32
24
16
8
V
GS
=1.8V
1.6V
1.4V
1.0V
1.2V
Ta=25C
Drain to source voltage V
DS
(V)
Drain current I
D
(mA
)
0
6
5
4
1
3
2
0
60
50
40
30
20
10
V
DS
=5V
f=1kHz
Ta=25C
Gate to source voltage V
GS
(V)
Forward transfer admittance |Y
fs
|
(mS
)
1
10
100
1000
3
30
300
0
12
10
8
6
4
2
C
iss
C
oss
C
rss
Drain to source voltage V
DS
(V)
Input capacitance
(Common source
), Output capacitance
(Common source
),
Reverse transfer capacitance
(Common source
) C
iss
,C
oss
,C
rss
(pF
)
0
6
5
4
1
3
2
0
120
100
80
60
40
20
Ta=25C
25C
75C
V
DS
=5V
Gate to source voltage V
GS
(V)
Drain current I
D
(mA
)
0
6
5
4
1
3
2
0
120
100
80
60
40
20
I
D
=10mA
Ta=75C
25C
25C
Gate to source voltage V
GS
(V)
Drain to source ON-resistance R
DS(on)
(
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
V
O
=5V
Ta=25C
Output current I
O
(mA)
Input voltage V
IN
(V
)
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