1
Power F-MOS FETs
unit: mm
2SK2129
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 20mJ
q V
GSS
= 30V guaranteed
q High-speed switching: t
f
= 50ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
1: Gate
2: Drain
3: Source
TO-220E Package
s Electrical Characteristics
(T
C
= 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
Conditions
V
DS
= 640V, V
GS
= 0
V
GS
= 30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
I
DR
= 3A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 2A
V
DD
= 200V, R
L
= 100
min
800
2
1.5
typ
3.2
2.4
730
90
40
35
60
50
160
max
0.1
1
5
4
-
1.6
2.5
Unit
mA
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
C/W
s Absolute Maximum Ratings
(T
C
= 25C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25C
Ta = 25C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
800
30
3
6
20
50
2
150
-
55 to +150
Unit
V
V
A
A
mJ
W
C
C
*
L = 4.5mH, I
L
= 3A, V
DD
= 50V, 1 pulse
9.90.3
2
3
1
4.60.2
2.90.2
2.60.1
2.540.2
0.750.1
1.20.15
5.080.4
15.00.3
13.7
+0.5
0.2
3.20.1
3.00.2
8.00.2
4.10.2
Solder Dip
1.450.15
0.70.1
7
2
Power F-MOS FETs
2SK2129
Area of safe operation (ASO)
P
D
Ta
EAS
T
j
I
D
V
DS
I
D
V
GS
V
th
T
C
V
DS
V
GS
R
DS(on)
I
D
| Y
fs
|
I
D
1
10
100
1000
0.01
0.1
1
10
100
Non repetitive pulse
T
C
=25C
t=100
s
10ms
1ms
DC
I
DP
I
D
Drain to source voltage V
DS
(V)
Drain current I
D
(A
)
0
20
40
60
80 100 120 140 160
0
10
20
30
40
50
60
(1) T
C
=Ta
(2) Without heat sink
(P
D
=2W)
(1)
(2)
Ambient temperature Ta (C)
Allowable power dissipation P
D
(W
)
25
50
75
100
125
150
175
0
5
10
15
20
25
30
V
DD
=50V
I
D
=3A
Junction temperature T
j
(C)
Avalanche energy capacity EAS
(mJ
)
0
10
20
30
40
50
60
0
1
2
3
4
V
GS
=15V
10V
6V
5.5V
50W
4.5V
5V
4V
T
C
=25C
Drain to source voltage V
DS
(V)
Drain current I
D
(A
)
0
12
10
8
2
6
4
0
1
2
3
4
5
T
C
=0C
150C
100C
25C
V
DS
=25V
Gate to source voltage V
GS
(V)
Drain current I
D
(A
)
0
25
50
75
100
125
150
0
1
2
3
4
5
6
V
DS
=25V
I
D
=1mA
Case temperature T
C
(C)
Gate threshold voltage V
th
(V
)
0
5
10
15
20
25
30
0
20
40
60
80
10
30
50
70
I
D
=6A
1.5A
3A
0.75A
T
C
=25C
Gate to source voltage V
GS
(V)
Drain to source voltage V
DS
(V
)
0
1
2
3
4
5
0
12
10
8
6
4
2
V
GS
=10V
T
C
=150C
100C
25C
0C
Drain current I
D
(A)
Drain to source ON-resistance R
DS(on)
(
)
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
=25V
T
C
=25C
Drain current I
D
(A)
Forward transfer admittance |Y
fs
|
(S
)
3
Power F-MOS FETs
2SK2129
C
iss
, C
oss
, C
rss
V
DS
V
DS
, V
GS
Q
g
t
d(on)
, t
r
, t
f
, t
d(off)
I
D
0
50
100
150
200
250
1
10
100
1000
10000
C
iss
C
oss
C
rss
f=1MHz
T
C
=25C
Drain to source voltage V
DS
(V)
Input capacitance
(Common source
), Output capacitance
(Common source
),
Reverse transfer capacitance
(Common source
) C
iss
,C
oss
,C
rss
(pF
)
0
10
20
30
40
50
60
0
100
200
300
400
500
600
700
800
0
4
8
12
16
2
6
10
14
I
D
=3A
V
GS
V
DS
Gate to source voltage V
GS
(V
)
Gate charge amount Q
g
(nC)
Drain to source voltage V
DS
(V
)
0
1
2
3
4
5
0
50
100
150
200
250
300
t
d(off)
t
f
t
r
t
d(on)
V
DD
=200V
V
GS
=10V
T
C
=25C
Drain current I
D
(A)
Switching time t
d(on)
,t
r
,t
f
,t
d(off)
(ns
)
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