Silicon MOS FETs (Small Signal)
Unit: mm
1: Gate
2: Drain
3: Source
MiniP3-F1 Package
4.5
0.1
3.0
0.15
45
2.6
0.1
0.4 max.
1.6
0.2
1.5
0.1
4.0
2.5
0.1
3
+0.25
0.20
1.0
+0.1
0.2
0.5
0.08
0.4
0.04
0.4
0.08
1
2
3
1.5
0.1
3
2SK2211
Silicon N-Channel MOS FET
For switching
I
Features
G Low ON-resistance R
DS(on)
G High-speed switching
G Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
*
T
ch
T
stg
Ratings
30
20
1.0
2.0
1.0
150
-55 to +150
Unit
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta = 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate to Source voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Fall time
Turn-off time (delay time)
Symbol
I
DSS
I
GSS
V
DSS
V
GSS
V
th
R
DS(on)1
*1
R
DS(on)2
*1
| Y
fs
|
*1
C
iss
C
oss
C
rss
t
d(on)
t
f
t
d(off)
Conditions
V
DS
= 25V, V
GS
= 0
V
GS
= 15V, V
DS
= 0
I
D
= 0.1mA, V
GS
= 0
I
GS
= 0.1mA, V
DS
= 0
V
DS
= 5V, I
D
= 1mA
V
GS
= 4V, I
D
= 0.5A
V
GS
= 10V, I
D
= 0.5A
V
DS
= 10V, I
D
= 0.5A
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 0.5A
V
DD
= 10V, R
L
= 20
min
30
20
0.8
0.5
typ
0.48
0.35
87
69
23
12
160
60
Unit
A
A
V
V
V
S
pF
pF
pF
ns
ns
ns
max
10
10
2.0
0.75
0.60
*1
Pulse measurement
*
PC board: Copper foil of the drain portion should have a area of 1cm
2
or
more and the board thickness should be 1.7mm.
Marking Symbol: 2M
Internal Connection
G
D
S
1
SJF00029AED
Publication date: August 2002
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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