1
Power F-MOS FETs
unit: mm
2SK3042
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 45mJ
q High-speed switching: t
f
= 30ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Electrical Characteristics
(T
C
= 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
DS
= 200V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 5A
V
DS
= 10V, I
D
= 5A
I
DR
= 8A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 5A
V
DD
= 100V, R
L
= 20
min
250
1
2.7
typ
0.4
4.7
1100
200
60
20
20
130
30
max
0.1
1
5
0.6
-
1.7
Unit
mA
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
s Absolute Maximum Ratings
(T
C
= 25C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25C
Ta = 25C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
250
20
7
14
45
35
2
150
-
55 to +150
Unit
V
V
A
A
mJ
W
C
C
*
L = 0.1mH, I
L
= 8A, V
DD
= 50V, 1 pulse
1
9.90.3
15.00.5
13.70.2
4.20.2
4.60.2
2.90.2
0.80.1
1.40.2
2
3
3.20.1
2.60.1
0.550.15
2.540.3
5.080.5
3.00.5
1.60.2
1: Gate
2: Drain
3: Source
TO-220D Package
2
Power F-MOS FETs
Area of safe operation (ASO)
P
D
Ta
I
D
V
DS
I
D
V
GS
V
GS
T
C
V
th
T
C
R
DS(on)
I
D
| Y
fs
|
I
D
C
iss
, C
oss
, C
rss
V
DS
2SK3042
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
t =10
s
100
s
DC
1ms
10ms
100ms
Drain to source voltage V
DS
(V)
Drain current I
D
(A
)
0
160
40
120
80
140
20
100
60
0
60
50
40
30
20
10
(1) T
C
=Ta
(2) Without heat sink
(1)
(2)
Ambient temperature Ta (C)
Allowable power dissipation P
D
(W
)
0
12
10
8
2
6
4
0
2
4
6
8
10
V
DS
=10V
T
C
=0C
125C
150C
25C
75C
Gate to source voltage V
GS
(V)
Drain current I
D
(A
)
0
25
50
75
100
125
150
0
1
2
3
4
5
6
V
DS
=25V
I
D
=1mA
Case temperature T
C
(C)
Gate threshold voltage V
th
(V
)
0
10
8
2
6
4
0
0.1
0.2
0.3
0.4
0.5
0.6
T
C
=25C
V
GS
=10V
15V
Drain current I
D
(A)
Drain to source ON-resistance R
DS(on)
(
)
0
2
4
6
8
10
12
14
16
0
8
6
2
5
7
4
1
3
V
DS
=10V
T
C
=25C
Drain current I
D
(A)
Forward transfer admittance |Y
fs
|
(S
)
0
40
80
120
160
200
1
3
10
30
100
300
1000
3000
10000
f=1MHz
T
C
=25C
C
iss
C
oss
C
rss
Drain to source voltage V
DS
(V)
Input capacitance
(Common source
), Output capacitance
(Common source
),
Reverse transfer capacitance
(Common source
) C
iss
,C
oss
,C
rss
(pF
)
0
25
50
75
100
125
150
5.0
5.2
5.4
5.6
5.8
6.0
6.2
6.4
6.6
V
DS
=10V
I
D
=3A
Case temperature T
C
(C)
Gate to source voltage V
GS
(V
)
0
5
10
15
20
2
4
6
8
10
12
14
16
0
6.5V
7.5V
10V
5.5V
6V
7V
5V
40W
V
GS
=15V
T
C
=25C
Drain to source voltage V
DS
(V)
Drain current I
D
(A
)
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