Power MOSFETs
1
Publication date: January 2004
SJG00029BED
2SK3192
Silicon N-channel power MOSFET
Features
Avalanche energy capability guaranteed
High-speed switching
Low ON resistance R
on
No secondary breakdown
Applications
PDP
Switching mode regulator
Absolute Maximum Ratings T
C
= 25C
Unit: mm
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
V
DSS
250
V
Gate-source surrender voltage
V
GSS
30
V
Drain current
I
D
30
A
Peak drain current
I
DP
120
A
Avalanche energy capability
*
EAS
925
mJ
Power dissipation
P
D
100
W
T
a
= 25C
3
Channel temperature
T
ch
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
V
DSS
I
D
= 1 mA, V
GS
= 0
250
V
Drain-source cutoff current
I
DSS
V
DS
= 200 V, V
GS
= 0
10
A
Gate-source cutoff current
I
GSS
V
GS
= 30 V, V
DS
= 0
1
A
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2
4
V
Drain-source ON resistance
R
DS(on)
V
GS
= 10 V, I
D
= 15 A
50
68
m
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 15 A
8
15
S
Short-circuit forward transfer capacitance
C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
4 200
pF
(Common source)
Short-circuit output capacitance
C
oss
1 600
pF
(Common source)
Reverse transfer capacitance
C
rss
650
pF
(Common source)
Turn-on delay time
t
d(on)
V
DD
= 100 V, I
D
= 15 A, R
L
= 6.7
45
ns
Rise time
t
r
V
GS
= 10 V
115
ns
Turn-off delay time
t
d(off)
330
ns
Fall time
t
f
130
ns
Electrical Characteristics T
C
= 25C 3C
15.0
0.3
5.0
0.2
11.0
0.2
2.0
0.2
2.0
0.1
0.6
0.2
1.1
0.1
5.45
0.3
10.9
0.5
1
2
3
21.0
0.5
16.2
0.5
Solder Dip
(2.3)
(3.2)
15.0
0.2
(0.7)
3.2
0.1
(3.2)
1: Gate
2: Drain
3: Source
EIAJ: SC-92
TOP-3F-B1 Package
Note) *: L
= 1.74 mH, I
L
= 30 A, V
DD
= 50 V, 1 pulse, T
a
= 25C
Internal Connection
G
S
D
Marking Symbol: K3192
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and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
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information as described in this material.
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tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
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Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP
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