Silicon Junction FETs (Small Signal)
1
Publication date: April 2002
SJF00034AED
2SK3427
Silicon N-Channel Junction
For impedance conversion in low frequency
For electret capacitor microphone
I Features
High mutual conductance g
m
Low noise voltage of NV
I Absolute Maximum Ratings T
a
= 25C
1: Drain
2: Source
3: Gate
MiniT3-F1 Package
Unit: mm
Parameter
Symbol
Rating
Unit
Drain-source voltage
V
DSO
20
V
Drain-gate voltage
V
DGO
20
V
Drain-source current
I
DSO
2
mA
Drain-gate current
I
DGO
2
mA
Gate-source current
I
GSO
2
mA
Allowable power dissipation
P
D
200
mW
Operating ambient temperature
T
opr
-20 to
+80
C
Storage temperature
T
stg
-55 to
+150
C
Marking Symbol: 5E
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain current
I
D
V
DS
= 2.0 V, R
D
= 2.2 k 1%
100
460
A
I
DSS
V
DS
= 2.0 V, R
D
= 2.2 k 1%, V
GS
= 0
107
470
Mutual conductance
g
m
V
D
= 2.0 V, V
GS
= 0, f = 1 kHz
660
1 600
S
Noise voltage
NV
V
D
= 2.0 V, R
D
= 2.2 k 1%
10
V
C
O
= 5 pF, A-Curve
Voltage gain
G
V1
V
D
= 2.0 V, R
D
= 2.2 k 1%
-7.5
-4.7
dB
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
G
V2
V
D
= 12 V, R
D
= 2.2 k 1%
-4.0
-1.5
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
G
V3
V
D
= 1.5 V, R
D
= 2.2 k 1%
-8.0
-5.0
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
G
V
. f
*
V
D
= 2.0 V, R
D
= 2.2 k 1%
0
1.7
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz to 70 Hz
Voltage gain difference
G
V2
- G
V1
0
4.0
dB
G
V1
- G
V3
0
1.7
I Electrical Characteristics T
a
= 25C 3C
Note) *:
G
V
. f
is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
0.05
+0.10
0.40
0.01
+0.02
0.12
2.1
0.1
1.5
0.2
2.20
0.15
0.7
0.1
5.8
0.2
2.9
0.2
1.9
0.1
(0.95)
(0.5)
(0.95)
2
3
1
10
5
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2002 MAY
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