1
Silicon Junction FETs (Small Signal)
Publication date: July 2003
SJF00037AED
2SK3546J
Silicon N-Channel MOSFET
For switching
Features
High-speed switching
Wide frequency band
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
V
DSS
I
D
= 10 A, V
GS
= 0
50
V
Drain-source cutoff current
I
DSS
V
DS
= 50 V, V
GS
= 0
1.0
A
Gate-source cutoff current
I
GSS
V
GS
= 7 V, V
DS
= 0
5.0
A
Gate threshold voltage
V
th
I
D
= 1.0 A, V
DS
= 3 V
0.9
1.2
1.5
V
Drain-source ON resistance
R
DS(on)
I
D
= 10 mA, V
GS
= 2.5 V
8
15
I
D
= 10 mA, V
GS
= 4.0 V
6
12
Forward transfer admittance
Y
fs
I
D
= 10 mA, V
DS
= 3 V, f = 1 kHz
20
60
mS
Short-circuit forward transfer capacitance
C
iss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz
12
pF
(Common source)
Short-circuit output capacitance
C
oss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz
7
pF
(Common source)
Reverse transfer capacitance
C
rss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz
3
pF
(Common source)
Turn-on time
*
t
on
V
DD
= 3 V, V
GS
= 0 V to 3 V, R
L
= 470
200
ns
Turn-off time
*
t
off
V
DD
= 3 V, V
GS
= 3 V to 0 V, R
L
= 470
200
ns
Parameter
Symbol
Rating
Unit
Drain-source voltage
V
DS
50
V
Gate-source voltage (Drain open)
V
GSO
7
V
Drain current
I
D
100
mA
Peak drain current
I
DP
200
mA
Power dissipation
P
D
125
mW
Channel temperature
T
ch
125
C
Storage temperature
T
stg
-55 to +125
C
V
OUT
V
DD
= 3 V
V
GS
= 3.0 V
50
470
100
F
V
IN
90%
10%
10%
90%
V
OUT
t
on
t
off
Unit: mm
1: Gate
2: Source
3: Drain
SSMini3-F1 Package
0.27
0.02
3
1
2
0.12
+0.03
0.01
0.80
0.05
(0.80)
0.85
1.60
0.05
0 to 0.02
0.10 max.
0.70
+0.05 0.03
(0.375)
5
5
1.60
+0.05
0.03
1.00
0.05
(0.50)(0.50)
+0.05 0.03
Electrical Characteristics T
a
= 25C 3C
Marking Symbol: 5F
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: t
on
, t
off
test circuit
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and semiconductors described in this material
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2002 JUL
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