Silicon MOSFETs (Small Signal)
Publication date: December 2004
SJF00043AED
1
2SK3938
Silicon N-channel MOSFET
For switching circuits
Features
High-speed switching
SSSMini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings
T
a
= 25
a
a
C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
V
DSS
30
V
Gate-source surrender voltage
V
GSS
12
V
Drain current
I
D
100
mA
Peak drain current
I
DP
200
mA
Power dissipation
P
D
100
mW
Channel temperature
T
ch
T
T
125
C
Storage temperature
T
stg
T
T
55 to +125
C
Electrical Characteristics
T
a
= 25
a
a
C3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
V
DSS
V
V
I
D
= 10 A, V
GS
= 0
30
V
Drain-source cutoff current
I
DSS
V
DS
V
V = 20 V, V
GS
= 0
1.0
A
Gate-source cutoff current
I
GSS
V
GS
= 10 V, V
DS
10 V, V
10 V, V = 0
10
A
Gate threshold voltage
V
TH
I
D
= 1.0 A, V
DS
A, V
A, V = 3 V
0.5
1.0
1.5
V
Drain-source ON resistance
R
DS(on)
R
R
I
D
= 10 mA, V
GS
= 2.5 V
7
12
I
D
= 10 mA, V
GS
= 4.0 V
5
8
Forward transfer admittance
Y
fs
I
D
= 10 mA, V
DS
= 3 V, f = 1 kHz
20
55
mS
Short-circuit forward transfer capacitance
(Common source)
C
iss
V
DS
V
V = 3 V, V
GS
= 0, f = 1 MHz
12
pF
Short-circuit output capacitance
(Common source)
C
oss
10
pF
Reverse transfer capacitance
(Common source)
C
rss
6
pF
Turn-on time
*
t
on
t
t
V
DD
V
V = 3 V, V
GS
= 0 V to 3 V, I
D
= 10 mA
350
ns
Turn-off time
*
t
off
t
t
V
DD
V
V = 3 V, V
GS
= 3 V to 0 V, I
D
= 10 mA
350
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : t
on
, t
off
measurement circuit
off
off
V
DD
=
3 V
100 F
V
GS
=
0 V to 3 V
V
OUT
50
290
V
GS
90%
10%
10%
90%
V
OUT
t
on
t
off
of
of
Marking Symbol: 6U
1.20
0.05
0.52
0.03
0 to 0.01
0.15 max.
5
0.15 min
.
0.80
0.05
0.15 min.
Unit: mm
1: Gate
2: Source
3: Drain
SSSMini3-F1 Package
0.33
(0.40)
(0.40)
1
2
3
5
0.80
0.05
1.20
0.05
+0.05
0.02
0.10
+0.05
0.02
0.23
+0.05
0.02
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP
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