ICs for MD System
1
Publication date: February 2002
SDD00018CEB
AN8771NFH
Pre-amplifier IC for MD
s Overview
The AN8771NFH is an MD pre-amplifier IC of wide
range of supply voltage (V
CC
= 2.7 V to 5.5 V). This IC
can form an MD system using 3-beam pick-up in combi-
nation with the MN66614 digital signal processing LSI.
s Features
Applicable for 3-beam pick-up
RF signal processing
Error signal generating function for servo
Various status detection function
Laser power control circuit
s Applications
MD
Unit: mm
QFP064-P-1010
10.000.20
48
33
32
17
16
1
64
49
12.000.20
10.000.20
0.100.10
12.000.20
1.950.20
(1.25)
(1.25)
0.50
0.18
+0.1
0.05
0.15
+0.10
0.05
Seating plane
(1.00)
0.500.20
0
to 10
Note) The package of this product will be changed
to lead-free type (QFP064-P-1010A). See the
new package dimensions section later of this
datasheet.
AN8771NFH
2
SDD00018CEB
s Block Diagram
64
63
62
61
60
59
GND4
GND1
V
CC1
V
CC3
58
57
56
55
54
53
52
51
RF amp.
IV
IV
IV
IV
IV
IV
IV
IV
IV
IV
IV
IV
50
49
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
16
15
14
13
12
11
10
9
8
7
GND2
V
CC2
6
5
4
GND3
3
2
1
FBAL
/FOF set
VCA
TRCRS
VCA
VCA
BPF
ASOF set
NRF det.
VCA
Mode control
DSL
EQ
AGC
3TENV
OFT amp.
TBAL
/TOFSET
ASBDO
RFBDO
OFTR
Pin 20
Pin 21
V
REF
Pin 18
V
REF
V
REF
V
REF
V
REF
V
REF
Mirror
circuit
s Pin Descriptions
Pin No.
Symbol
Description
1
REFO
APC reference voltage buffer
output pin
2
GND3
APC circuit GND pin
3
APCREF
APC reference voltage input pin
4
TEMPIN
+
Temperature sensor amp.
+
input pin
5
TEMPIN
-
Temperature sensor amp.
-
input pin
6
TEMP
Temperature sensor amp. output pin
7
TOFS
Tracking offset adjustment pin
8
TBAL
Tracking balance adjustment pin
Pin No.
Symbol
Description
9
TE
Tracking error signal output pin
10
N.C.
11
CCRS
Capacitor connection pin for
track cross circuit
12
TRCRS
Track cross output pin
13
FBAL
Focus balance adjustment pin
14
FE
Focus error signal output pin
15
TGAIN
TE amp. gain adjustment pin
16
FOFS
Focus offset adjustment pin
AN8771NFH
3
SDD00018CEB
Pin No.
Symbol
Description
38
PEFMS
Data slice output pin
39
GND2
Data slice circuit GND pin
40
PEFM
Data slice level setting pin
41
EFMIND
Data slice signal input pin
42
EFMINS
EFM detection input pin
43
OUTRF
EFM output pin
44
CRFAGC
RFAGC capacitor connection pin
45
EQADJ
EQ setting pin
46
EQIN
EQ input pin
47
ARFO
RF amp. output pin
48
SVREF
Reference signal input pin
49
VREF
Reference signal output pin
50
RF1
RF1 signal input pin
51
RF2
RF2 signal input pin
52
SWMS
Pit RF amp. polarity setting pin
53
B
Main beam B signal input pin
54
A
Main beam A signal input pin
55
D
Main beam D signal input pin
56
C
Main beam C signal input pin
57
F
Side beam F signal input pin
58
E
Side beam E signal input pin
59
V
CC3
APC circuit V
CC
pin
60
LDON
LD amp. on/off control signal
input pin
61
LDO
LD amp. output pin
62
APCPD
+
Photo diode light quantity
detection pin
63
APCPD
-
PD polarity reversing current input pin
64
REFIN
APC amp. reference voltage input
pin
Pin No.
Symbol
Description
17
AS
Main beam light quantity sum
signal output pin
18
ASOFS
AS offset adjustment pin
19
ASGAIN
Amp. gain adjustment pin for
main beam system
20
MON3T
3T envelope detection output pin
21
CEA
Capacitor connection pin for 3T
envelope detection
22
GND4
GND for FE/TE system
23
BDO
AS drop-out detection signal
output pin
24
CBDOG
BDO detection capacitor
connection pin
25
OFTR
Off-track signal output pin
26
CBDOP
RFBDO detection capacitor
connection pin
27
OFTIN
Off-track detection signal input pin
28
OFTO
Off-track detection signal output pin
29
ADIP
ADIP FM signal output pin
30
GND1
GND pin
31
NRFDET
RF detection signal output pin
32
V
CC1
V
CC
pin
33
RFSWHL
Reflection factor changeover
signal input pin
34
RFSWPG
Pit/group changeover signal
input pin
35
NREC
Recording/playback change over
signal input pin
36
NRFSTBY Standby control signal input pin
37
V
CC2
Data slice circuit V
CC
pin
s Pin Descriptions (continued)
AN8771NFH
4
SDD00018CEB
s Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply voltage
V
CC
6.0
V
Supply current
I
CC
35
mA
Power dissipation
*
P
D
210
mW
Operating ambient temperature
*
T
opr
-
30 to
+
85
C
Storage temperature
*
T
stg
-
55 to
+
125
C
Note) 1. Except for the operating ambient temperature and storage temperature, all ratings are for T
a
=
25
C.
2. *: V
CC1
, V
CC2
, V
CC3
are of same voltage.
s Recommended Operating Range
Parameter
Symbol
Range
Unit
Supply voltage
V
CC1
2.7 to 5.5
V
V
CC2
V
CC3
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
No load current consumption 1
I
TOTAL1
Normal mode
19.6
24.5
29.4
mA
No load current consumption 2
I
TOTAL2
Power saving mode
1.0
1.7
2.5
mA
(Power saving mode)
V
REF
offset
V
OVB
V
48
=
V
32
/ 2
-
7
0
7
mV
V
REF
output impedance
Z
VB
I
49
=
3 mA
5
LD amp. off operation
V
LDOFF
LD amp. off mode
0.4
V
LD amp. gain
G
LD
V
62
: 1 kHz sine wave (50 mV[p-p],
18
20
22
dB
DC offset voltage
=
V
REF
-
25 mV)
FE offset
+
adjustment
V
OFO
+
V
16
=
V
REF
-
0.5 V
100
mV
V
19
=
V
REF
-
0.5 V
FE offset
-
adjustment
V
OFO
-
V
16
=
V
REF
+
0.5 V
-
100
mV
V
19
=
V
REF
-
0.5 V
FE gain 1
G
FEA1
V
54
: 5 kHz sine wave (40 mV[p-p],
20
23
26
dB
DC offset voltage
=
V
REF
-
25 mV)
V
19
=
V
REF
-
0.5 V
FE relative gain 2
G
FEA2
V
54
: 5 kHz sine wave (300 mV[p-p],
-
18
dB
DC offset voltage
=
V
REF
-
160 mV)
V
19
=
V
REF
+
0.5 V
FE frequency characteristics A
G
FEACA
V
54
: 50 kHz sine wave (300 mV[p-p],
-
6
-
3
0
dB
DC offset voltage
=
V
REF
-
160 mV)
V
19
=
V
REF
-
0.5 V
FBAL adjustment range 12
G
FB12
V
13
=
V
REF
0.5 V
-
12
-
9.6
dB
V
19
=
V
REF
+
0.5 V
s Electrical Characteristics at T
a
=
25
C
AN8771NFH
5
SDD00018CEB
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
FBAL adjustment range 34
G
FB34
V
13
=
V
REF
0.5 V
9.6
12
dB
V
19
=
V
REF
+
0.5 V
TE offset
+
adjustment
V
OTO
+
V
7
=
V
REF
-
0.5 V
100
mV
V
15
=
V
REF
-
0.5 V
Pit mode
TE offset
-
adjustment
V
OTO
-
V
7
=
V
REF
+
0.5 V
-
100
mV
V
15
=
V
REF
-
0.5 V
Pit mode
TE gain 1
G
TEE1
V
58
: 5 kHz sine wave (4 mV[p-p],
37.5
42.5
47.5
dB
DC offset voltage
=
V
REF
-
3 mV)
V
15
=
V
REF
-
0.5 V, Pit mode
TE relative gain 2
G
TEE2
V
58
: 5 kHz sine wave (40 mV[p-p],
-
18
dB
DC offset voltage
=
V
REF
-
25 mV)
V
15
=
V
REF
+
0.5 V, Pit mode
TE frequency characteristics E
G
TEACE
V
58
: 100 kHz sine wave (40 mV[p-p],
-
6
-
3
0
dB
DC offset voltage
=
V
REF
-
25 mV)
V
15
=
V
REF
+
0.5 V, Pit mode
TBAL adjustment range 12
G
TB12
V
8
=
V
REF
0.5 V
-
3
-
2.3
dB
V
15
=
V
REF
+
0.5 V, Pit mode
TBAL adjustment range 34
G
TB34
V
8
=
V
REF
0.5 V
2.3
3
dB
V
15
=
V
REF
+
0.5 V, Pit mode
AS offset
+
adjustment
V
OASO
+
V
18
=
V
REF
-
0.5 V
100
mV
V
19
=
V
REF
-
0.5 V
AS offset
-
adjustment
V
OASO
-
V
18
=
V
REF
+
0.5 V
-
100
mV
V
19
=
V
REF
-
0.5 V
AS gain 1
G
AS1
V
54
: 5 kHz sine wave (50 mV[p-p],
10.6
13.6
15.6
dB
DC offset voltage
=
V
REF
-
30 mV)
V
19
=
V
REF
-
0.5 V
AS relative gain 2
G
AS2
V
54
: 5 kHz sine wave (300 mV[p-p],
-
18
dB
DC offset voltage
=
V
REF
-
160 mV)
V
19
=
V
REF
+
0.5 V
AS OFTO amp. relative gain
G
ASOF
V
54
: 5 kHz sine wave (300 mV[p-p],
5.8
6.8
7.8
dB
DC offset voltage
=
V
REF
-
160 mV)
V
19
=
V
REF
+
0.5 V, Group mode
AS frequency characteristics
G
ASAC
V
54
: 50 kHz sine wave (300 mV[p-p],
-
6
-
3
0
dB
DC offset voltage
=
V
REF
-
160 mV)
V
19
=
V
REF
+
0.5 V
ADIP gain 1
G
AD1
V
54
: 21.6 kHz sine wave (12 mV[p-p],
31
37
40
dB
DC offset voltage
=
V
REF
-
7 mV)
V
19
=
V
REF
-
0.5 V
ADIP relative gain 2
G
ADVCA2
V
54
: 21.6 kHz sine wave (150 mV[p-p],
-
18
dB
DC offset voltage
=
V
REF
-
80 mV)
V
19
=
V
REF
+
0.5 V
s Electrical Characteristics at T
a
=
25
C (continued)
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