unit: mm
1
GaAs MMICs
8-0.50.07
2.80.2
2-12
2-12
10-0.2
+0.1
0.05
1
2
3
10
2-0.550.1
2~12
2~12
0.30.1
2.20.2
12
11
1.10.2
3.450.1
9
8
7
6
4
5
4.00.2
10-0.150.05
12-0~0.2
3.40.2
Part A
Detail of Part A & B
Part B
1: NC
7: V
DD1
2: V
DD2
8: NC
3: Source2
9: IN1
4: IN2
10: NC
5: NC
11: GND
6: NC
12: GND
ESOF-10D Type Package
GN01081B
GaAs IC (with built-in ferroelectric)
Driver amplifier for PCS
s Features
q High output amplifier
q Low distortion
s Absolute Maximum Ratings
(Ta = 25C)
Parameter
Power supply voltage
Circuit current
Max input power
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DD
I
DD
P
in
P
D
T
opr
T
stg
Ratings
8
100
-
5
450
-
30 to +90
-
40 to +120
Unit
V
mA
dBm
mW
C
C
s Electrical Characteristics
(V
DD
= 3.0V, f = 1880MHz, Pout = 11.0dBm, Ta = 25 3C)
Parameter
Circuit current
Power gain
Adjacent channel
leakage power (ACP) 1
Adjacent channel
leakage power (ACP) 2
Conditions
IS
-
95 modulation, 1.25MHz Detuning
30kHz Bandwidth
IS
-
95 modulation, 2.25MHz Detuning
30kHz Bandwidth
min
22
typ
60
25
-
56
-
71
max
75
27
-
51
-
66
Unit
mA
dB
dBc
dBc
Symbol
I
DD
PG
ACP1
ACP2
Test method
(1)
(1)
(1)
(2)
(1)
(2)
Test method (1): Measurement circuit is shown in the following diagram.
(2): This item is the sampling guaranteed item.
10 9 8 7 6
1
12
2 3 4 5
11
150
5.6nH
2pF
1.5nH
100pF
1pF
10
1.5nH
33nH
5.6nH
2pF
100pF+1000pF
100pF+47nF
IN
OUT
20
V
DD2
V
DD1
33pF
s Measurement Circuit
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