1
Infrared Light Emitting Diodes
,
,
,
,,
,,
,
1
2
1.0
0.38
0.15
0.6
0.1
0.5
0.1
0.6
0.1
0.4
0.1
Mark (Red)
Spherical lens
1.5
0.2
3.2
0.15
0.1 max.
2.2
0.15
6.0
0.3
5.0
0.3
3.4
0.2
3.0
0.2
0.6
0.35
0.2
0.75
1.5
2.0
0.2
4.0
0.15
3.0
0.15
1.0
1: Anode
2: Cathode
Unit : mm
0.55
0.05
LN189L
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
Ratings
Unit
Power dissipation
P
D
190
mW
Forward current (DC)
I
F
100
mA
Pulse forward current
I
FP
*
0.2
A
Reverse voltage (DC)
V
R
3
V
Operating ambient temperature
T
opr
25 to +85
C
Storage temperature
T
stg
40 to +100
C
*
f = 10 kHz, Duty cycle = 25 %
Features
High-power output, high-efficiency : P
O
= 5.5 mW (typ.)
Fast response and high-speed modulation capability : t
r
, t
f
= 20 ns (typ.)
Infrared light emission close to monochromatic light :
P
= 880 nm(typ.)
Narrow directivity using spherical lenses; works well with optical
systems in auto focus systems
Mini hollow mold resin package
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Radiant power
P
O
I
F
= 100mA
3
5.5
mW
Peak emission wavelength
P
I
F
= 100mA
880
nm
Spectral half band width
I
F
= 100mA
50
nm
Forward voltage (DC)
V
F
I
F
= 100mA
1.55
1.9
V
Reverse current (DC)
I
R
V
R
= 3V
10
A
Rise time
t
r
I
FP
= 100mA
20
ns
Fall time
t
f
I
FP
= 100mA
20
ns
Half-power angle
The angle in which radiant intencity is 50%
20
deg.
Precautions for Use
[Airtightness] This product is not structured to provide a complete air seal. Therefore it cannot be immersed in solutions for
purposes such as boiling tests or ultrasonic cleaning.
[Ability to withstand soldering heat]
The package of this product contains thermoplastic resin which has a limited ability to withstand heat. Therefore
this product cannot be put through automated soldering operations in which the ambient temperature exceeds
the specified temperature. The recommended soldering conditions are as follows.
Temperature of soldering iron tip : 260C or less
]
or
: 300C or less
Soldering time
: 5 seconds or less : 1 second or less
Soldering position
: At least 2 mm away from lead base
[Ability to withstand chemicals]
If the transparent case requires cleaning, wipe it lightly using ethyl alcohol, methyl alcohol, or isopropyl alcohol.
If you plan to use other solvents, carefully check to make sure there are no problems such as a misshapen case or
a change in the condition of the case material.
2
LN189L
Infrared Light Emitting Diodes
I
F
-- Ta
120
100
80
60
40
20
Ambient temperature Ta (C )
Allowable forward current I
F
(mA)
0
20
40
60
80
100
0
25
I
F
-- V
F
160
140
120
100
80
40
20
60
0
Forward voltage V
F
(V)
Ta = 25C
Forward current I
F
(mA)
0
0.5
1.0
1.5
2.0
I
FP
-- V
F
1
10
1
Forward voltage V
F
(V)
Pulse forward current I
FP
(A)
10
2
0
t
w
= 10
s
f = 100Hz
Ta = 25C
1
3
5
2
4
P
O
-- Ta
10
1
Ambient temperature Ta (C )
I
F
= 100mA
Relative radiant power
P
O
40
0
40
80
10
1
P
-- Ta
1000
900
800
700
600
Ambient temperature Ta (C )
I
F
= 100mA
Peak emission wavelength
P
(nm)
40
0
40
80
120
Spectral characteristics
100
80
60
40
20
Wavelength
(nm)
Relative radiant intensity (%)
820
860
900
940
980
1020
0
780
I
F
= 100mA
P
O
-- I
F
10
3
10
2
10
1
Forward current I
F
(A)
Relative radiant power
P
O
10
10
2
10
1
10
3
10
2
10
1
1
(1) t
w
= 10
s
Duty = 0.1%
(2) t
w
= 50
s
Duty = 50%
(3) DC
Ta = 25C
Directivity characteristics
0
10
20
30
40
50
60
70
80
90
V
F
-- Ta
1.8
1.6
1.4
1.2
0.8
1.0
Ambient temperature Ta (C )
Forward voltage V
F
(V)
40
0
40
80
120
20
90
100
80
70
60
50
40
30
Relative radiant intensity (%)
I
F
= 100mA
10mA
1mA
(1)
(2)
(3)
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