1
Power Transistors
2SB967
Silicon PNP epitaxial planar type
For low-frequency power amplification
s
Features
q
Possible to solder the radiation fin directly to printed cicuit board
q
Low collector to emitter saturation voltage V
CE(sat)
q
Large collector current I
C
s
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25
C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
27
18
7
8
5
20
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 2V, I
C
= 2A
I
C
= 3A, I
B
= 0.1A
V
CB
= 6V, I
E
= 50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
18
7
90
typ
120
max
100
1
625
1
85
Unit
nA
A
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
P
Q
R
h
FE
90 to 135
125 to 205
180 to 625
Unit: mm
1:Base
2:Collector
3:Emitter
U Type Package
6.5
0.1
5.3
0.1
4.35
0.1
4.6
0.1
2.3
0.1
0.75
0.1
1
2
3
0.93
0.1
2.5
0.1
0.8max
1.0
0.2
7.3
0.1
1.8
0.1
2.3
0.1
0.5
0.1
0.5
0.1
0.1
0.05
1.0
0.1
6.5
0.2
2.3
5.35
4.35
13.3
0.3
2.3
0.1
5.5
0.2
6.0
1.8
0.75
0.6
3
2.3
2
1
0.5
0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC63
U Type Package (Z)
Unit: mm
2
Power Transistors
2SB967
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
32
24
8
20
28
16
4
12
T
C
=Ta
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
6
5
4
3
2
1
T
C
=25C
35mA
25mA
30mA
20mA
15mA
10mA
1mA
5mA
I
B
=40mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
2.0
1.6
0.4
1.2
0.8
0
12
10
8
6
4
2
V
CE
=2V
T
C
=100C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=30
25C
T
C
=100C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=2V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
240
200
160
120
80
40
V
CB
=6V
f=200MHz
T
C
=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
200
160
120
80
40
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
PDF 
ZIP