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Электронный компонент: OH10010

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1
GaAs Hall Devices
OH10010
GaAs Hall Device
Magnetic sensor
I Features
Hall voltage: typ. 105 mV (V
C
= 6 V, B = 0.1 T)
Input resistance: typ. 0.75 k
Satisfactory linearity of GaAs hall voltage with respect to the
magnetic field
Small temperature coefficient of the hall voltage: - 0.06%/C
Mini type (4-pin) package with positioning projection. Allowing
automatic insertion through the magazine package.
I Applications
Various hall motor (VCR, phonograph, VD, CD, and FDD)
Automotive equipment
Industrial equipment
Applicable to wide-varying field (OA equipment, etc.)
I Absolute Maximum Ratings T
a
= 25C
Unit : mm
1 : V
H
Output
(-) side
2 : V
C
Input
(-) side
3 : V
H
Output
(+) side
4 : V
C
Input
(+) side
Mini Type Package (4-pin) with positioning projection
Parameter
Symbol
Rating
Unit
Control voltage
V
C
12
V
Power dissipation
P
D
150
mW
Operating ambient temperature
T
opr
-30 to +125
C
Storage temperature
T
stg
-55 to +125
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Hall voltage
*1
V
H
V
C
= 6 V, B = 0.1 T
80
105
130
mV
Unequilibrium ratio
*2, 4
V
HO
V
C
= 6 V, B = 0 T
19
mV
Input resistance
R
IN
I
C
= 1 mA, B = 0 T
0.5
0.75
k
Output resistance
R
OUT
I
C
= 1 mA, B = 0 T
1.5
5
k
Temperature coefficient of hall voltage
I
C
= 6 mA, B = 0.1 T
-0.06
%/
C
Temperature coefficient of input
I
C
= 1 mA, B = 0 T
0.3
%/
C
resistance
Linearity of hall voltage
*3
I
C
= 6 mA, B = 0.1 T/0.5 T
2
%
I Electrical Characteristics T
a
= 25C
1.5
0.2
1.0 0.025
0.5
0.1
1.9
0.2
2.9
0.2
1.45
0.2
(0.5 R)
0.8
0.95
0.95
0.4
0.2
0.4
0.2
2
3
1
4
1.1
+
0.2
-
0.1
0.16
+
0.1
-
0.06
2.8
+ 0.2
- 0.3
0 to 0.1
+
0.1
-
0.05
0.4
0.5 R
0.65
0.15
0.65
0.15
Class
A
B
C
D
E
V
HO
(mV)
+19 to +9
+12 to +2
+5 to -5
-2 to -12
-9 to -19
Marking Symbol: ON
Note) *1 : V
H
=
V
H
+
+V
H
-
2
*2 : Output pin voltage under no-load (B = 0) condition
*3 : The linearity
of V
H
is a percentage of a difference between cumulative sensitivity of K
H1
and K
H5
which are measured
respectively at B = 0.1 T and 0.5 T to their average. That is,
=
K
H5
-K
H1
(the cumulative sensitivity K
H
=
V
H
)
1/2(K
H1
+K
H5
)
I
C
B
*4 : V
HO
rank classification
GaAs Hall Devices
2
OH10010
P
D
T
a
R
IN
T
a
V
H
T
a
V
H
B
V
H
I
C
0
40
80
120
160
200
180
140
100
60
20
0
20
40
80
60
140
120
100
160
Ambient temperature T
a
(
C)
Power dissipation P
D
(mW
)
V
H
V
C
I Typical Drive Circuit
+9 V
+V
+9 V
-9 V
-V
-9 V
+
-
3
1
2
4
0
-40
0
40
80
120
40
80
120
160
200
240
Ambient temperature T
a
(
C)
Hall voltage V
H
(mV
)
B
= 1 kG
I
C
= 6 mA
0
-40
0
40
80
120
800
1 600
1 400
1 200
1 000
600
400
200
Ambient temperature T
a
(
C)
Input resistance R
IN
(
)
B
= 0
I
C
= 1 mA
0
0
0.2
0.4
0.6
0.8
1.0
800
1 600
1 400
1 200
1 000
600
400
200
Magnetic flux density B (T)
Hall voltage V
H
(mV
)
V
C
= 6 V
T
a
= 25C
0
0
4
12
16
2
6
10
14
8
40
80
120
160
200
240
280
320
Control current I
C
(mA)
Hall voltage V
H
(mV
)
B
= 1 kG
T
a
= 25C
0
0
4
12
16
2
6
10
14
8
40
80
120
160
200
240
280
320
Control voltage V
C
(V)
Hall voltage V
H
(mV
)
B
= 1 kG
T
a
= 25C