1
Transmissive Photosensors (Photo Interrupters)
,,
,,
Pin connection
Unit : mm
Mark for indicating
LED side
1.2
0.5
8.8
0.2
8.0 min.
1.6
1.8
0.2
2.0
0.2
3.0
0.3
1.6
4.0
6.0
0.2
Device
center
0.4
0.1
13.8
0.3
2.8
0.2
2.0
3.0
0.8
*10.0
0.4
*2.54
0.5
0.7
A
A'
SEC. A-A'
2
3
1
4
2
3
1
4
(Note) * is dimension at the root of leads
,,
,
,
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
ON1110
Photo Interrupter
For contactless SW, object detection
Features
Highly precise position detection : 0.3 mm
Fast response : t
r
, t
f
= 6
s (typ.)
Small output current variation against change in temperature
Small package used for saving mounting space
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol Ratings
Unit
Input (Light
Reverse voltage (DC)
V
R
3
V
emitting diode)
Forward current (DC)
I
F
50
mA
Power dissipation
P
D
*1
75
mW
Collector current
I
C
20
mA
Output (Photo Collector to emitter voltage
V
CEO
30
V
transistor)
Emitter to collector voltage
V
ECO
5
V
Collector power dissipation
P
C
*2
100
mW
Temperature
Operating ambient temperature
T
opr
25 to +85
C
Storage temperature
T
stg
30 to +100
C
*1
Input power derating ratio is
1.0 mW/C at Ta
25C.
*2
Output power derating ratio is
1.33 mW/C at Ta
25C.
Electrical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Input
Forward voltage (DC)
V
F
I
F
= 50mA
1.2
1.5
V
Reverse current (DC)
I
R
V
R
= 3V
10
A
characteristics
Capacitance between terminals
C
t
V
R
= 0V, f = 1MHz
50
pF
Output
Collector cutoff current
I
CEO
V
CE
= 10V
200
nA
characteristics Collector to emitter capacitance
C
C
V
CE
= 10V, f = 1MHz
5
pF
Transfer
Collector current
I
C
*2
V
CE
= 10V, I
F
= 20mA
0.3
mA
characteristics
Response time
t
r
, t
f
*1
V
CC
= 10V, I
C
= 1mA, R
L
= 100
6
s
Collector to emitter saturation voltage V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
0.3
V
*
Switching time measurement circuit
Outline
ON1110 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
*2
I
C
classifications
Class
Q
R
S
I
C
(mA)
0.3 to 0.85
0.75 to 2.15
> 1.85
2
Transmissive Photosensors (Photo Interrupters)
ON1110
60
50
40
30
20
10
Ambient temperature Ta (C )
0
20
40
60
80
100
0
25
I
F
-- V
F
60
30
20
10
50
40
Forward voltage V
F
(V)
Forward current I
F
(mA)
0.4
0.8
1.2
1.6
2.4
2.0
0
0
Ta = 25C
I
C
-- I
F
10
2
10
1
10
1
Forward current I
F
(mA)
Collector current I
C
(mA)
10
10
2
10
3
10
2
1
V
CE
= 10V
Ta = 25C
V
F
-- Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (C )
Forward voltage V
F
(V)
0
20
40
60
80
100
0
40 20
0
20
40
60
80
100
40 20
0
20
40
60
80
100
40 20
I
C
-- V
CE
10
2
10
1
10
1
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
1
10
10
2
10
2
10
1
Ta = 25C
Ambient temperature Ta (C )
Relative output current I
C
(%)
I
C
-- Ta
160
120
80
40
V
CE
= 10V
I
F
= 20mA
I
CEO
-- Ta
10
10
2
1
10
3
10
1
Ambient temperature Ta (C )
Dark current I
CEO
(
A)
10
4
1
10
10
1
t
r
-- I
C
10
1
Collector current I
C
(mA)
Rise time t
r
(
s)
10
1
10
2
10
3
10
2
V
CC
= 10V
Ta = 25C
I
C
-- d
100
60
40
20
80
Distance d (mm)
Relative output current I
C
(%)
1
2
6
5
4
3
0
0
V
CE
= 10V
Ta = 25C
I
F
= 20mA
I
F
, I
C
-- Ta
Forward current, collector current I
F
, I
C
(mA)
I
F
= 30mA
20mA
10mA
d
10%
90%
t
d
t
r
t
f
R
L
V
CC
V
1
V
2
V
1
V
2
Sig.
OUT
50
Sig.IN
,,
,
V
CE
= 24V
10V
100
R
L
= 1k
500
10mA
I
F
= 50mA
I
F
I
C
Criterion
0
PDF 
ZIP