1
Reflective Photosensors (Photo Reflectors)
CNZ2179 (ON2179)
Reflective Photosensor
Overview
CNZ2179 is a reflective photosensor with a long focal distance,
in which a high efficiency GaAs infrared light emitting diode is used
as a light emitting element and a high sensitivity Si phototransistor
is used as the light detecting element.
Features
Long focal distance : 6 mm (typ.)
Visible light cutoff resin is used
Unit : mm
Pin connection
5.2
13.0
(7.6)
(2-0.5)
(2-0.5)
0.85max.
1
4
2
3
8.0
10 min.
(2.54)
1
4
3
2
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(Note)
1. Tolerance unless otherwise specified is
0.3
2. ( ) Dimension is reference
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R
L
I
F
I
C
V
CC
d = 5 mm
Standard white paper
(Reflective ratio 90%)
10%
90%
t
r
t
f
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol Ratings
Unit
Input (Light
Reverse voltage (DC)
V
R
3
V
emitting diode)
Forward current (DC)
I
F
50
mA
Power dissipation
P
D
*1
75
mW
Collector current
I
C
20
mA
Output (Photo Collector to emitter voltage
V
CEO
20
V
transistor)
Emitter to collector voltage
V
ECO
5
V
Collector power dissipation
P
C
*2
100
mW
Temperature
Operating ambient temperature
T
opr
25 to +80
C
Storage temperature
T
stg
30 to +85
C
*1
Input power derating ratio is 1.25 mW/C at Ta
25C.
*2
Output power derating ratio is 1.67 mW/C at Ta
25C.
Electrical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Input
Forward voltage (DC)
V
F
I
F
= 50mA
1.3
1.5
V
characteristics Reverse current (DC)
I
R
V
R
= 3V
10
A
Output characteristics Collector cutoff current
I
CEO
V
CE
= 10V
0.2
A
Transfer
Collector current
I
C
*1
V
CC
= 5V, I
F
= 20mA, R
L
= 100
180
1500
A
characteristics
Response time
t
r
*2
, t
f
*3
V
CC
= 10V, I
C
= 0.1mA, R
L
= 100
20
s
Collector to emitter saturation voltage V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
0.5
V
*1
Transfer characteristics measurement circuit
(Ambient light is shut off completely.)
*2
Time required for the collector current to increase from
10% to 90% of its final value.
*3
Time required for the collector current to decrease from
90% to 10% of its initial value.
Note) The part number in the parenthesis shows conventional part number.
Caution for Safety
DANGER
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc-
tor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available product
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the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any
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Consult our sales staff in advance for information on the following applications:
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reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the prod-
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(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
any defect which may arise later in your equipment.
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company.
Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
2001 MAR
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