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L-32XOPT1XX
3.0mm PHOTOTRANSISTOR
L-32XOPT1XX
D1,D2=BLACK
1.All dimension are in millimeters(inches).
2.Tolerance is
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0.25mm(0.01")unless otherwise specified.
Part No.
P
D
(mw)
ABSOLUTE MAXIMUN RATING:(Ta=25C)
V
(BR)R
(V)
Topr
Tstg
PARAMETER
Power Dissipation
Reverse Voltage
Operating Temperature
Range
Storage Temperature
Range
10
5
-35C to 85C
-35C to 85C
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250C
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5C For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25C)
Part No.
BV
CEO
(V)
BV
ECO
(V)
I
CEO
(nA)
V
CE
(s)(V)
t
R
/t
F
(uS)
l
C
(mA)
f
(nm)
MIN TYP MAX
TEST
CONDITION
PARAMETER
L-32ROPT1D1
30
5
100
0.4
15/15
0.2
0.6
900 940
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
L-32AOPT1D1
30
5
100
0.4
15/15
0.6
1.0
900 940
B-7
I
C
=100uA
Ee=0mW/cm
2
I
E
=100
uA
Ee=0mW/cm
2
V
E
=20V
Ee=0mW/cm
2
I
C
=2mA
Ee=0.5mW/cm
2
V
CE
=5V
I
C
=1mA
RL=1000[
V
CE
=5V
Ee=0.1mW/cm
2
COLLECTOR
DARK
CURRENT
RISE/FALL
TIME
SPECTRAL
SENSITIVITY
WAVELENGTH
ON STATE
COLLECTOR
CURRENT
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
EMITTER-
COLLECTOR
BREAKDOWN
VOLTAGE
COLLECTOR-
EMITTER
BREAKDOWN
VOLTAGE