Page 1 of 7
Document No. 70-0157-01
www.psemi.com
2005 Peregrine Semiconductor Corp. All rights reserved.
The PE926C31 is a high performance monolithic CMOS
RS-422 line driver. Its operating supply range is 3.0 to 3.6
V, with an output signal overvoltage range of 0 6 V. The
PE26C31 offers higher speed and lower power than other
RS-422 driver types. It is packaged in a flat pack and is
ideal for space applications.
The PE926C31 is manufactured in Peregrine's patented
Ultra Thin Silicon (UTSi) CMOS process, offering the
performance of GaAs with the economy and integration of
conventional CMOS.
Product Specification
Product Description
Figure 1. Package Drawing
PE926C31
Features
High-speed operation: < 10 nS typical
Low power: < 150 uA typical
(unloaded)
3.3 V operation
Standard packaging: 16-lead flat pack
SEL Immune UTSi CMOS-on-sapphire
SEU <10-10 errors / bit-day
300 Krad Total Dose
Quad RS-422 Differential Line
Driver Radiation Hardened
Product Specification
PE926C31
Page 2 of 7
2005 Peregrine Semiconductor Corp. All rights reserved.
Document No. 70-0157-01
UltraCMOSTM RFIC Solutions
Table 1. Pin Descriptions
Table 2. Recommended Operating Conditions
Electrostatic Discharge (ESD) Precautions
When handling this UTSi device, observe the
same precautions that you would use with other
ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified in Table 2.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOSTM
devices are immune to latch-up.
Table 3. Truth Table
Device Functional Considerations
The PE926C31 operates at high switching
speeds. In order to obtain maximum
performance, it is crucial that pin 16 be supplied
with a bypass capacitor to ground (pin 8).
Figure 2. Pin Configuration (Top View)
1
A
PE926C31
2
AQ+
3
AQ-
4
E+
5
BQ-
6
BQ+
7
B
8
V-
16
15
14
13
12
11
10
9
V+
D
DQ+
DQ-
E-
CQ-
C
CQ+
Pin
No.
Pin
Name
Description
1 A
Channel
A
Input
2
AQ+
Channel A Noninverting Ouput
3
AQ-
Channel A Inverting Output
4
E+
Enable, active high
5
BQ-
Channel B Inverting Output
6
BQ+
Channel B Noninverting Output
7 B
Channel
B
Input
8 V-
Ground
Pin
9
C
Channel C Input
10
CQ+
Channel C Noninverting Output
11
CQ-
Channel C Inverting Ouput
12
E-
Enable, active low
13
DQ-
Channel D Inverting Output
14
DQ+
Channel D Noninverting Output
15
D
Channel D Input
16 V+
Supply
Pin
Symbol Parameter/Conditions Min Max Units
V+ Supply
voltage
3.0
3.6 V
T
OP
Operating
temperature
range
-55 125 C
VIN Maximum
input
voltage
0
Vdd V
VOUT
Maximum output voltage
0
Vdd
V
IOUT
Maximum output current
-50
50
mA
E+ E-
Data
Q+ Q-
L H X Z Z
H X L L H
X L
H X H H L
X L
Product Specification
PE926C31
Page 3 of 7
Document No. 70-0157-01
www.psemi.com
2005 Peregrine Semiconductor Corp. All rights reserved.
Table 4. Electrical Specifications
Notes:
1. "Line" pins refer to AQ-, AQ+, BQ-, BQ+, CQ-, CQ+, DQ-, DQ+, differential outputs
2. "Digital Input" or "Enable" pins refer to E+, E-
3. "Digital Input" pins refer to A, B, C, D
Param
Description
Conditions
Pin(s)
Min
Typ
Max
Units
VD1
Output Differential Voltage
No load
AQ+, AQ-, BQ+, BQ-,
CQ+, CQ-, DQ+, DQ-
(V+) -0.3
(V+)
(V+)
+0.6
V
VD2
Output Differential Voltage
RL=100 , Fig DC1
1.9
2.3
V
DVD2
Output Differential Voltage Change
IOUT 0 20mA, Fig DC1
-0.4
0
0.4
V
VCM
Common Mode Voltage
RL=100 , Fig DC1
1.5
2.0
V
DVCM
Common Mode Voltage Change
RL=100 , Fig DC1
-0.4
0
0.4
V
IOZH
Tristate Output Leakage (H)
VOUT = V+, disabled
-5
-0.1
uA
IOZL
Tristate Output Leakage (L)
VOUT = 0.0 V, disabled
0.1
5
uA
IOSC
Output Short Circuit Current
VOUT = 0.0 V, Enabled Q=H
-30
-70
-100
mA
IOFFH
Output Leakage Current (H)
VOUT=6.0V,V+ and all inputs
= 0.0V
1
100
uA
IOFFL
Output Leakage Current (L)
VOUT=-0.25V,V+ and all
inputs = 0.0V
-100
-1
uA
VOH
Output High Voltage
Iout=-20mA
2.0
2.4
V
VOL
Output Low Voltage
Iout=20mA
0.1
0.5
V
VIH
Input threshold H
Vdd=3.6V (VIHMIN=0.7*VDD)
A, B, C, D, E+, E-
2.5
V
VIL
Input Threshold L
Vdd=3.0V
(VILMAX=0.3*VDD)
A, B, C, D, E+, E-
0.9
V
IIH
Input Lkg Current
A, B, C, D, E+, E-
-1
1
uA
IIL
Input Lkg Current
A, B, C, D, E+, E-
-1
1
uA
VIKL
Input Clamp Diode Voltage
IIN=-20 mA
A, B, C, D, E+, E-
-1.5
VIKH
Input Clamp Diode Voltage
IIN=20 mA
A, B, C, D, E+, E-
(V+) +
1.5 V
ICC
Supply Current
No load, Inputs = 0 V or V+
V+
120
uA
150 uA
-55 C < Tcase < 125 C, 3.0 V < V+ < 3.6 V, PreRad, unless otherwise specified
Product Specification
PE926C31
Page 4 of 7
2005 Peregrine Semiconductor Corp. All rights reserved.
Document No. 70-0157-01
UltraCMOSTM RFIC Solutions
Table 5. Post-Irradiation DC Electrical Specifications
Notes:
1. "Line" pins refer to AQ-, AQ+, BQ-, BQ+, CQ-, CQ+, DQ-, DQ+, differential outputs
2. "Digital Input" or "Enable" pins refer to E+, E-
3. "Digital Input" pins refer to A, B, C, D
4. Output Short Circuit not intended to imply continuous operation
Tcase = 25 C, 3.0 V < V+ < 3.6 V, 300 KRad, unless otherwise specified
Param
Description
Conditions
Pin(s)
Min
Typ
Max
Units
VD1
Output Differential Voltage
No load
AQ+, AQ-, BQ+, BQ-,
CQ+, CQ-, DQ+, DQ-
(V+) -0.3
(V+)
(V+) +0.6
V
VD2
Output Differential Voltage
RL=100 , Fig DC1
1.9
2.3
V
DVD2
Output Differential Voltage
Change
IOUT 0 20mA, Fig DC1
-0.4
0
0.4
V
VCM
Common Mode Voltage
RL=100 , Fig DC1
1.5
2.0
V
DVCM
Common Mode Voltage Change
RL=100 , Fig DC1
-0.4
0
0.4
V
IOZH
Tristate Output Leakage (H)
VOUT = V+, disabled
-5
-0.1
uA
IOZL
Tristate Output Leakage (L)
VOUT = 0.0 V, disabled
0.1
5
uA
IOSC
Output Short Circuit Current
VOUT = 0.0 V, Enabled Q=H
-30
-70
-100
mA
IOFFH
Output Leakage Current (H)
VOUT=6.0V,V+ and all inputs
= 0.0V
1
100
uA
IOFFL
Output Leakage Current (L)
VOUT=-0.25V,V+ and all
inputs = 0.0V
-100
-1
uA
VOH
Output High Voltage
Iout=-20mA
2.0
2.4
V
VOL
Output Low Voltage
Iout=20mA
0.1
0.5
V
VIH
Input threshold H
Vdd=3.6V
(VIHMIN=0.7*VDD)
A, B, C, D, E+, E-
2.5
V
VIL
Input Threshold L
Vdd=3.0V
(VILMAX=0.3*VDD)
A, B, C, D, E+, E-
0.9
V
IIH
Input Lkg Current
A, B, C, D, E+, E-
-1
1
uA
IIL
Input Lkg Current
A, B, C, D, E+, E-
-1
1
uA
VIKL
Input Clamp Diode Voltage
IIN=-20 mA
A, B, C, D, E+, E-
-1.5
VIKH
Input Clamp Diode Voltage
IIN=20 mA
A, B, C, D, E+, E-
(V+) +
1.5 V
ICC
Supply Current
No load, Inputs = 0 V or V+
V+
120
uA
150 uA
Product Specification
PE926C31
Page 5 of 7
Document No. 70-0157-01
www.psemi.com
2005 Peregrine Semiconductor Corp. All rights reserved.
Table 6. Pre-irradiation Electrical Specifications
Param
Description
Conditions
Pin(s)
Min
Typ
Max
Units
TPHL
Prop Delay H-L
RL=100 CL=50 pF
AQ+,
AQ-,
BQ+,
BQ-,
CQ+,
CQ-,
DQ+,
DQ-
3
9
15
nS
TPLH
Prop Delay H-L
3
9
15
nS
TSK1
Prop Delay Q+/Q-
-3
0
3
nS
TSK2*
Prop Delay Skew Ch/Ch
-3
0
3
nS
TRISE*
Rise Time 20%/80%
3
10
nS
TFALL*
Fall Time 20%/80%
3
10
nS
TPHZ
Prop Delay H-Z
12
20
nS
TPZH
Prop Delay Z-H
12
20
nS
TPLZ
Prop Delay L-Z
10
20
nS
TPZL
Prop Delay Z-L
10
20
nS
-55 C < Tcase < 125 C, 3.0 V < V+ < 3.6 V, PreRad, unless otherwise specified
Table 7. Post-irradiation Electrical Specifications
25 C, 3.0 V < V+ < 3.6 V, 300 KRad, unless otherwise specified
Param
Description
Conditions
Pin(s)
Min
Typ
Max
Units
TPHL
Prop Delay H-L
RL=100 CL=50 pF
AQ+,
AQ-,
BQ+,
BQ-,
CQ+,
CQ-,
DQ+,
DQ-
3
9
15
nS
TPLH
Prop Delay H-L
3
9
15
nS
TSK1
Prop Delay Q+/Q-
-3
0
3
nS
TSK2*
Prop Delay Skew Ch/Ch
-3
0
3
nS
TRISE*
Rise Time 20%/80%
3
10
nS
TFALL*
Fall Time 20%/80%
3
10
nS
TPHZ
Prop Delay H-Z
20
20
nS
TPZH
Prop Delay Z-H
20
20
nS
TPLZ
Prop Delay L-Z
10
20
nS
TPZL
Prop Delay Z-L
10
20
nS
*Note: Guaranteed by design, not tested
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