PEREGRINE SEMICONDUCTOR CORP.
|
http://www.peregrine-semi.com
Copyright
Peregrine Semiconductor Corp. 2003
Page 1 of 8
Product Description
Figure 1. Functional Schematic Diagram
PE4124
RF
LO
IF
Figure 2. Package Type
Table 1. Electrical Specifications @ +25 C
Parameter Minimum
Typical Maximum Units
Frequency Range:
LO
RF
IF*
750
820
--
--
--
70
850
920
--
MHz
MHz
MHz
Conversion Loss**
6.9
7.3
dB
Isolation:
LO-RF
LO-IF
29
38
31
43
dB
dB
Input IP3
29
32.5
dBm
Input 1 dB Compression
23
dBm
*An IF frequency of 70MHz is a nominal frequency. The IF frequency can be specified by the user as long as the RF and LO frequencies are within the
specified maximum and minimum.
**Conversion Loss includes loss of IF transformer (M/A COM ETC1-1-13, nominal loss 0.7dB at 70MHz).
Test conditions unless otherwise noted: LO = 70MHz, LO input drive = 17dBm, RF input drive = 3dBm.
PRODUCT SPECIFICATION
PE4124
High Linearity Quad MOSFET
Mixer for GSM800 & Cellular
BTS
Features
Integrated, single-ended RF &
LO interfaces
High linearity: IIP3>+32 dBm,
820
- 920 MHz (+17 dBm LO)
Low conversion loss: 6.9 dB
(+17 dBm LO)
High isolation: typical LO-IF at
43 dB, LO-RF at 31 dB
Designed for low-side LO
injection
The PE4124 is a high linearity, passive Quad MOSFET
Mixer for GSM800 & Cellular Base Station Receivers and
exhibits high dynamic range performance over a broad
LO drive range up to 20 dBm. This mixer integrates
passive matching networks to provide single-ended
interfaces for the RF and LO ports, eliminating the need
for external RF baluns or matching networks. The
PE4124 is optimized for frequency down-conversion
using low-side LO injection for GSM800 & Cellular Base
Station applications, and is also suitable for use in up-
conversion applications.
The PE4124 is manufactured in Peregrine's patented
Ultra Thin Silicon (UTSi
) CMOS process, offering the
performance of GaAs with the economy and integration
of conventional CMOS.
8-lead
TSSOP
PE4124
Product Specification
Copyright
Peregrine Semiconductor Corp. 2003
File No. 70/0043~03A
|
UTSi CMOS RFIC SOLUTIONS
Page 2 of 8
Figure 3. Pin Configuration
PE4124
5
6
7
8
4
3
2
1
GND
RF
GND
LO
GND
IF2
IF1
GND
Table 2. Pin Descriptions
Pin
No.
Pin
Name
Description
1 LO
LO
Input
2
GND
Ground connection for Mixer. Traces
should be physically short and connect
immediately to ground plane for best
performance.
3 RF
RF
Input
4 GND
Ground.
5 GND
Ground.
6
IF2
IF differential output
7
IF1
IF differential output
8 GND
Ground.
Table 3. Absolute Maximum Ratings
Symbol Parameter/Conditions Min Max Units
T
ST
Storage temperature
range
-65 150
C
T
OP
Operating temperature
range
-40 85
C
P
LO
LO input power
20
dBm
P
RF
RF input power
16
dBm
V
ESD
ESD Sensitive Device
250
V
Electrostatic Discharge (ESD) Precautions
When handling this UTSi device, observe the same
precautions that you would use with other ESD-
sensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UTSi CMOS
devices are immune to latch-up.
PE4124
Product Specification
PEREGRINE SEMICONDUCTOR CORP.
|
http://www.peregrine-semi.com
Copyright
Peregrine Semiconductor Corp. 2003
Page 3 of 8
PE4124
GND
IF2
IF1
GND
GND
RF
GND
LO
IF
T2
LO
RF
LO
IF
RF
Eval
Board
Sig
Gen
Sig
Gen
Hybrid
Tee
3 dB
PA
Sig
Gen
3 dB
Spectrum
Analyzer
3 dB
6 dB
6 dB
4124
Figure 4. Evaluation Board Schematic Diagram
T2 M/A-Com E-Series RF 1:1 Transformer ETC1-1-13
Figure 5. Evaluation Board
Table 4. Bill of Materials
Reference
Value / Description
T2
M/A Com ETC1-1-13
U1 (Not Labeled)
PE4124 Mixer
R1 0
J1, J2, J3
SMA Connector
Figure 6. Evaluation Board Testing Block Diagram, 2-Tone Setup
Pin 1
PE4124
Product Specification
Copyright
Peregrine Semiconductor Corp. 2003
File No. 70/0043~03A
|
UTSi CMOS RFIC SOLUTIONS
Page 4 of 8
0
5
10
15
20
25
30
800
825
850
875
900
925
950
1dB
Com
p
r
s
s
i
on (
d
B
m
)
Frequency (MHz)
-40!C
25!C 85!C
-10
-8
-6
-4
-2
0
800
825
850
875
900
925
950
C
o
n
v
e
r
s
i
on Lo
s
s
(
d
B
)
Frequency (MHz)
85!C
-40!C
25!C
0
10
20
30
40
800
825
850
875
900
925
950
II
P
3
(
d
B
m
)
Frequency (MHz)
-40!C
25!C
85!C
0
5
10
15
20
25
30
800
825
850
875
900
925
950
OI
P3 (
d
B
m
)
Frequency (MHz)
-40!C
25!C
85!C
Typical Performance Plots (LO=17dBm, RF=3dBm, IF=70MHz)
Figure 7. Conversion Loss vs. Frequency
Figure 8. Input 1dB Compression vs. Frequency
Figure 9. Input IP3 vs. Frequency
Figure 10. Output IP3 vs. Frequency
PE4124
Product Specification
PEREGRINE SEMICONDUCTOR CORP.
|
http://www.peregrine-semi.com
Copyright
Peregrine Semiconductor Corp. 2003
Page 5 of 8
-40
-35
-30
-25
-20
-15
-10
-5
0
800
825
850
875
900
925
950
I
s
olat
i
on (
d
B
)
Frequency (MHz)
85!C
25!C
-40!C
-60
-50
-40
-30
-20
-10
0
800
825
850
875
900
925
950
I
s
ol
a
t
i
o
n (
d
B
)
Frequency (MHz)
85!C
25!C
-40!C
-12
-10
-8
-6
-4
-2
0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Ret
u
r
n
Lo
s
s
(
d
B)
Frequency (GHz)
85!C
25!C
-40!C
-30
-25
-20
-15
-10
-5
0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Ret
u
r
n
Lo
s
s
(
d
B
)
Frequency (GHz)
25!C
-40!C
85!C
Typical Performance Plots (LO=17dBm, RF=3dBm, IF=70MHz)
Figure 11. LO-RF Isolation vs. Frequency
Figure 12. LO-IF Isolation vs. Frequency
Figure 13. LO Port Return Loss vs. Frequency
Figure 14. RF Port Return Loss vs. Frequency
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