127
GaAs Infrared Emitting Diodes
TO-46 Lensed Package -- 940 nm
VTE1113
PACKAGE DIMENSIONS
inch (mm)
CASE 24
TO-46 HERMETIC (Lensed)
CHIP SIZE: .018" X .018"
DESCRIPTION
This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for
higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25C
(unless otherwise noted)
Maximum Temperatures
Storage and Operating:
-55C to 125C
Continuous Power Dissipation:
200 mW
Derate above 30C:
2.11 mW/C
Maximum Continuous Current:
100 mA
Derate above 30C:
1.05 mA/C
Peak Forward Current, 10 s, 100 pps:
3.0 A
Temp. Coefficient of Power Output (Typ.):
-.8%/C
Maximum Reverse Voltage:
5.0V
Maximum Reverse Current @ V
R
= 5V:
10 A
Peak Wavelength (Typical):
940 nm
Junction Capacitance @ 0V, 1 MHz (Typ.):
35 pF
Response Time @ I
F
= 20 mA
Rise:1.0 s
Fall: 1.0 s
Lead Soldering Temperature:
260C
(1.6 mm from case, 5 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
(See also GaAlAs curves, pages 123-124)
Refer to General Product Notes, page 2.
Part Number
Output
Forward Drop
Half Power Beam
Angle
Irradiance
Radiant
Intensity
Total Power
Test
Current
V
F
E
e
Condition
I
e
P
O
I
FT
@ I
FT
1/2
mW/cm
2
distance
Diameter
mW/sr
mW
mA
(Pulsed)
Volts
Typ.
Min.
Typ.
mm
mm
Min.
Typ.
Typ.
Max.
VTE1113
12
15
36
6.4
156
30
1.0
1.9
2.5
10
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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